公开(公告)号：US20240218515A1

公开(公告)日：2024-07-04

申请号：US18602760

申请日：2024-03-12

Applicant: Lam Research Corporation

Inventor： Tuan Nguyen ,  Eashwar Ranganathan ,  Shankar Swaminathan ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Ramesh Chandrasekharan ,  Frank Loren Pasquale ,  Jennifer Leigh Petraglia

IPC: C23C16/52 ,  C23C16/448

CPC classification number: C23C16/52 ,  C23C16/448

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume.
The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

公开(公告)号：US20180138036A1

公开(公告)日：2018-05-17

申请号：US15351221

申请日：2016-11-14

Applicant: Lam Research Corporation

Inventor： Chloe Baldasseroni ,  Shankar Swaminathan

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer deposition are provided. Methods involve depositing at high temperature, using high plasma energy, and post-treating deposited silicon oxide using ultraviolet radiation. Such silicon oxide spacers are suitable for use as masks in multiple patterning applications to prevent pitch walking.

公开(公告)号：US20180122685A1

公开(公告)日：2018-05-03

申请号：US15431088

申请日：2017-02-13

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  lshtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68785 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

公开(公告)号：US09624578B2

公开(公告)日：2017-04-18

申请号：US14502947

申请日：2014-09-30

Applicant: Lam Research Corporation

Inventor： Jun Qian ,  Frank L. Pasquale ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Hu Kang ,  Shankar Swaminathan ,  Purushottam Kumar ,  Paul Franzen ,  Trung T. Le ,  Tuan Nguyen ,  Jennifer Petraglia ,  David Charles Smith ,  Seshasayee Varadarajan

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/509

CPC classification number: C23C16/45544 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/45536 ,  C23C16/5096 ,  C23C16/52

Abstract: Methods for depositing film on substrates are provided. In these embodiments, the substrates are processed in batches. Due to changing conditions within a reaction chamber as additional substrates in the batch are processed, various film properties may trend over the course of a batch. The methods herein can be used to address the trending of film properties over the course of a batch. More specifically, film property trending is minimized by changing the amount of RF power used to process substrates over the course of the batch. Such methods are sometimes referred to as RF compensation methods.

公开(公告)号：US20160340782A1

公开(公告)日：2016-11-24

申请号：US14850816

申请日：2015-09-10

Applicant: Lam Research Corporation

Inventor： Ramesh Chandrasekharan ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Hu Kang ,  Adrien LaVoie ,  Edward Augustyniak ,  Yukinori Sakiyama ,  Chloe Baldasseroni ,  Seshasayee Varadarajan ,  Basha Sajjad ,  Jennifer L. Petraglia

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3244

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

Abstract translation: 半导体处理装置中的喷头可以包括构造成改善原子层沉积期间的流动均匀性的面板通孔。 喷头可以包括具有用于将气体分散到基板上的多个通孔的面板，其中面板包括小直径的通孔。 例如，每个通孔的直径可以小于约0.04英寸。 另外或在替代方案中，喷头可以包括沿着圆周定位的直径大于被处理的基板的直径的直径的边缘通孔。 淋浴头可以是低容量的喷头，并且可以包括邻近一个或多个气体入口的挡板，其与喷淋头的增压室容积连通。 具有小直径通孔和/或边缘通孔的面板可以改善整体膜不均匀性，改善基板边缘处的方位角膜不均匀性，并且能够在较高RF功率下操作。

公开(公告)号：US20160177444A1

公开(公告)日：2016-06-23

申请号：US14578126

申请日：2014-12-19

Applicant: Lam Research Corporation

Inventor： Chloe Baldasseroni ,  Andrew Duvall ,  Ryan Blaquiere ,  Shankar Swaminathan

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4585 ,  H01J37/32623 ,  H01L21/68735 ,  H01L21/68785

Abstract: A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.

Abstract translation: 提供了一种用于在晶片上沉积膜的处理室，包括：基座，其具有中心顶表面，中心顶表面具有多个晶片支撑件，所述多个晶片支撑件被配置为将晶片支撑在中心顶表面上方的支撑位置处， 从中央顶面下来; 载体环，其被构造成由载体环支撑支撑，使得所述载体环的底表面在所述环形表面上方处于第一垂直间隔，所述载体环具有相对于顶表面限定的台阶面; 其中，当所述承载环位于所述承载环支撑件上时，所述承载环的所述台阶下表面被定位在处于与所述基座的顶表面上方的所述支撑位置垂直分离的处理水平处。

公开(公告)号：US20160177443A1

公开(公告)日：2016-06-23

申请号：US14578166

申请日：2014-12-19

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Hu Kang ,  Adrien LaVoie ,  Yi Chung Chiu ,  Frank L. Pasquale ,  Jun Qian ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  Karl F. Leeser ,  David Charles Smith ,  Wei-Chih Lai

IPC: C23C16/455

CPC classification number: C23C16/45527 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45561

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract translation: 本发明人考虑了用于基板处理装置的多级工艺气体输送系统。 在某些实施方案中，第一工艺气体可以首先被输送到衬底处理室中的衬底。 可以在稍后的时间将第二工艺气体递送到衬底以帮助均匀地给予衬底。 第一工艺气体和第二工艺气体的交付可以同时停止或者可以在不同的时间停止。

公开(公告)号：US20160056032A1

公开(公告)日：2016-02-25

申请号：US14466925

申请日：2014-08-22

Applicant: Lam Research Corporation

Inventor： Chloe Baldasseroni ,  Adrien LaVoie ,  Hu Kang ,  Jun Qian ,  Purushottam Kumar ,  Andrew Duvall ,  Cody Barnett ,  Mohamed Sabri ,  Ramesh Chandrasekharan ,  Karl F. Leeser ,  David C. Smith ,  Seshasayee Varadarajan ,  Edmund B. Minshall

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/52 ,  H01L21/02274

Abstract: Disclosed are methods of depositing films of material on semiconductor substrates. The methods may include flowing a film precursor into a processing chamber through a showerhead substantially maintained at a first temperature, and adsorbing the film precursor onto a substrate held on a substrate holder such that the precursor forms an adsorption-limited layer while the substrate holder is substantially maintained at a second temperature. The first temperature may be at least about 10° C. above the second temperature, or the first temperature may be at or below the second temperature. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed film precursor, and thereafter reacting adsorbed film precursor to form a film layer. Also disclosed herein are apparatuses having a processing chamber, a substrate holder, a showerhead, and one or more controllers for operating the apparatus to employ the foregoing film deposition techniques.

Abstract translation: 公开了在半导体衬底上沉积材料的方法。 所述方法可以包括通过基本上保持在第一温度的喷头将膜前体流入处理室，并且将膜前体吸附到保持在基板保持器上的基板上，使得前体形成吸附限制层，同时基板保持器为 基本保持在第二温度。 第一温度可以高于第二温度至少约10℃，或第一温度可处于或低于第二温度。 所述方法还可以包括从包围吸附膜前体的体积中去除至少一些未吸附的膜前体，然后使吸附膜前体反应形成膜层。 本文还公开了具有处理室，衬底保持器，喷头和用于操作该装置以使用上述成膜技术的一个或多个控制器的装置。

公开(公告)号：US11959175B2

公开(公告)日：2024-04-16

申请号：US17304540

申请日：2021-06-22

Applicant: Lam Research Corporation

Inventor： Tuan Nguyen ,  Eashwar Ranganathan ,  Shankar Swaminathan ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Ramesh Chandrasekharan ,  Frank Loren Pasquale ,  Jennifer Leigh Petraglia

IPC: C23C16/52 ,  C23C16/448

CPC classification number: C23C16/52 ,  C23C16/448

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

公开(公告)号：US11286560B2

公开(公告)日：2022-03-29

申请号：US16946009

申请日：2020-06-02

Applicant: Lam Research Corporation

Inventor： Richard Phillips ,  Chloe Baldasseroni ,  Nishanth Manjunath

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  G06F17/11 ,  H01L21/02 ,  H01L21/66 ,  H01L21/677

Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.