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公开(公告)号：US20240332007A1
公开(公告)日：2024-10-03
申请号：US18737855
申请日：2024-06-07
发明人： Chan Myae Myae Soe , Chloe Baldasseroni , Shiva Sharan Bhandari , Pulkit Agarwal , Adrien LaVoie , Bart J. Van Schravendijk
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/401 , C23C16/45536 , C23C16/45544 , C23C16/52 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.
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公开(公告)号：US20240240316A1
公开(公告)日：2024-07-18
申请号：US18622472
申请日：2024-03-29
发明人： Purushottam Kumar , Adrien LaVoie , Jun Qian , Hu Kang , Ishtak Karim , Fung Suong Ou
IPC分类号： C23C16/455 , C23C16/52 , H01L21/02 , H01L21/285
CPC分类号： C23C16/45527 , C23C16/45561 , C23C16/52 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.
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公开(公告)号：US12040181B2
公开(公告)日：2024-07-16
申请号：US17594816
申请日：2019-07-03
发明人： Chan Myae Myae Soe , Chloe Baldasseroni , Shiva Sharan Bhandari , Pulkit Agarwal , Adrien LaVoie , Bart J. van Schravendijk
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/401 , C23C16/45536 , C23C16/45544 , C23C16/52 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.
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公开(公告)号：US20230314946A1
公开(公告)日：2023-10-05
申请号：US18005595
申请日：2021-07-16
发明人： Eric Calvin Hansen , Timothy William Weidman , Chenghao Wu , Qinghuang Lin , Kyle Jordan Blakeney , Adrien LaVoie , Sivananda Krishnan Kanakasabapathy , Samantha S.H. Tan , Richard Wise , Yang Pan , Younghee Lee , Katie Lynn Nardi , Kevin Li Gu , Boris Volosskiy
CPC分类号： G03F7/094 , G03F7/0043 , G03F7/095 , G03F7/11 , G03F7/167 , G03F7/2004 , H01L21/0274
摘要： The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.
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公开(公告)号：US20230290657A1
公开(公告)日：2023-09-14
申请号：US18184545
申请日：2023-03-15
发明人： Jengyi Yu , Samantha S.H. Tan , Mohammed Haroon Alvi , Richard Wise , Yang Pan , Richard Alan Gottscho , Adrien LaVoie , Sivananda Krishnan Kanakasabapathy , Timothy William Weidman , Qinghuang Lin , Jerome S. Hubacek
CPC分类号： H01L21/67225 , G03F7/38 , H01L21/67167 , G03F7/167 , G03F7/0042 , G03F7/36
摘要： Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
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公开(公告)号：US11434567B2
公开(公告)日：2022-09-06
申请号：US16806560
申请日：2020-03-02
发明人： Adrien LaVoie , Hu Kang , Karl Frederick Leeser
IPC分类号： C23C16/455 , C23C16/40 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.
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公开(公告)号：US20220154336A1
公开(公告)日：2022-05-19
申请号：US17587560
申请日：2022-01-28
发明人： Ishtak Karim , Kiyong Cho , Adrien LaVoie , Jaswinder Guliani , Purushottam Kumar , Jun Qian
IPC分类号： C23C16/455 , C23C16/52 , C23C16/54
摘要： Methods and apparatuses for depositing approximately equal thicknesses of a material on at least two substrates concurrently processed in separate stations of a multi-station deposition apparatus are provided.
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8.发明申请公开(公告)号：US20200350219A1
公开(公告)日：2020-11-05
申请号：US16935137
申请日：2020-07-21
发明人： Pulkit Agarwal , Adrien LaVoie , Ravi Kumar , Purushottam Kumar
IPC分类号： H01L21/66 , H01J37/32 , H01L21/027
摘要： A pattern of core material is formed on a wafer to include core features that have a critical dimension. A trim amount indicates an average amount of thickness to be removed from vertically oriented surfaces of the core features. A trim profile indicates how much variation in removal of thickness from vertically oriented surfaces of the core features is to be applied as a function of radial location on the wafer. A first set of data correlates the trim amount to one or more plasma trim process parameters. A second set of data correlates the trim profile to one or more plasma trim process parameters. Based on the trim amount, trim profile, and first and second sets of data, a set of plasma trim process parameters to achieve the trim amount and trim profile on the wafer is determined and a corresponding plasma trim process is performed on the wafer.
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9.发明申请公开(公告)号：US20200227304A1
公开(公告)日：2020-07-16
申请号：US16836062
申请日：2020-03-31
发明人： Patrick Breiling , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , Ishtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
摘要： A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.
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公开(公告)号：US20200219757A1
公开(公告)日：2020-07-09
申请号：US16820003
申请日：2020-03-16
发明人： Patrick BREILING , Ramesh Chandrasekharan , Karl Leeser , Paul Konkola , Adrien LaVoie , Chloe Baldasseroni , Shankar Swaminathan , lshtak Karim , Yukinori Sakiyama , Edmund Minshall , Sung Je Kim , Andrew Duvall , Frank Pasquale
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32
摘要： A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
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