A semiconductor device has a semiconductor body with a first side and a second side that is arranged distant from the first side in a first vertical direction. The semiconductor device has a rectifying junction, a field stop zone of a first conduction type, and a drift zone of a first conduction type arranged between the rectifying junction and the field stop zone. The semiconductor body has a net doping concentration along a line parallel to the first vertical direction. At least one of (a) and (b) applies: (a) the drift zone has, at a first depth, a charge centroid, wherein a distance between the rectifying junction and the charge centroid is less than 37% of the thickness the drift zone has in the first vertical direction; (b) the absolute value of the net doping concentration comprises, along the straight line and inside the drift zone, a local maximum value.