发明申请
- 专利标题： INTEGRATED CIRCUIT DEVICES HAVING THROUGH-SILICON VIAS AND METHODS OF MANUFACTURING SUCH DEVICES
- 专利标题（中）： 具有穿透硅六角形的集成电路设备及其制造方法
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申请号： US14873453申请日： 2015-10-02
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公开(公告)号： US20160099201A1公开(公告)日： 2016-04-07
- 发明人: Ju-il Choi , Atsushi Fujisaki , Byung-lyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
- 申请人： Ju-il Choi , Atsushi Fujisaki , Byung-lyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
- 优先权： KR10-2014-0134474 20141006
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L23/532 ; H01L23/48
摘要：
An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.
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