- 专利标题： SEMICONDUCTOR MEMORY DEVICE HAVING PADS
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申请号： US14960716申请日： 2015-12-07
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公开(公告)号： US20160104684A1公开(公告)日： 2016-04-14
- 发明人: Chang Kun PARK , Seong Hwi SONG , Yong Ju KIM , Sung Woo HAN , Hee Woong SONG , Ic Su OH , Hyung Soo KIM , Tae Jin HWANG , Hae Rang CHOI , Ji Wang LEE , Jae Min JANG
- 申请人： SK hynix Inc.
- 优先权： KR10-2008-0080851 20080819
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/528
摘要：
A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
公开/授权文献
- US09595498B2 Semiconductor memory device having pads 公开/授权日：2017-03-14
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