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公开(公告)号：US20150076703A1
公开(公告)日：2015-03-19
申请号：US14550445
申请日：2014-11-21
Applicant: SK hynix Inc.
Inventor： Chang Kun PARK , Seong Hwi SONG , Yong Ju KIM , Sung Woo HAN , Hee Woong SONG , Ic Su OH , Hyung Soo KIM , Tae Jin HWANG , Hae Rang CHOI , Ji Wang LEE , Jae Min JANG
IPC: H01L23/00 , H01L27/105
CPC classification number: H01L24/06 , H01L23/5286 , H01L24/09 , H01L27/1052 , H01L2224/061 , H01L2224/0612 , H01L2224/06515 , H01L2224/091 , H01L2224/09515 , H01L2924/14 , H01L2924/1434 , H01L2924/30101 , H01L2924/3011 , H01L2924/00
Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
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公开(公告)号：US20150076614A1
公开(公告)日：2015-03-19
申请号：US14550328
申请日：2014-11-21
Applicant: SK hynix Inc.
Inventor： Chang Kun PARK , Seong Hwi SONG , Yong Ju KIM , Sung Woo HAN , Hee Woong SONG , Ic Su OH , Hyung Soo KIM , Tae Jin HWANG , Hae Rang CHOI , Ji Wang LEE , Jae Min JANG
IPC: H01L23/00 , H01L27/105
CPC classification number: H01L24/06 , H01L23/5286 , H01L24/09 , H01L27/1052 , H01L2224/061 , H01L2224/0612 , H01L2224/06515 , H01L2224/091 , H01L2224/09515 , H01L2924/14 , H01L2924/1434 , H01L2924/30101 , H01L2924/3011 , H01L2924/00
Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
Abstract translation: 半导体存储器件包括具有芯片焊盘形成区域的半导体电路基板。 在芯片焊盘区域一侧的半导体电路基板上形成一对数据线。 一对数据线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸。 这对数据线被布置为彼此相邻并且接收一对差分数据信号。 电源线形成在芯片焊盘区域的另一侧的半导体电路基板上。 电源线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸，并且电源线接收电力。
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公开(公告)号：US20160104684A1
公开(公告)日：2016-04-14
申请号：US14960716
申请日：2015-12-07
Applicant: SK hynix Inc.
Inventor： Chang Kun PARK , Seong Hwi SONG , Yong Ju KIM , Sung Woo HAN , Hee Woong SONG , Ic Su OH , Hyung Soo KIM , Tae Jin HWANG , Hae Rang CHOI , Ji Wang LEE , Jae Min JANG
IPC: H01L23/00 , H01L23/528
CPC classification number: H01L24/06 , H01L23/5286 , H01L24/09 , H01L27/1052 , H01L2224/061 , H01L2224/0612 , H01L2224/06515 , H01L2224/091 , H01L2224/09515 , H01L2924/14 , H01L2924/1434 , H01L2924/30101 , H01L2924/3011 , H01L2924/00
Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
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