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公开(公告)号:US20190287587A1
公开(公告)日:2019-09-19
申请号:US16194834
申请日:2018-11-19
Applicant: SK hynix Inc.
Inventor: Dong Hyun KIM , Dae Han KWON , Kwan Su SHON , Soon Ku KANG , Jung Hyun SHIN , Doo Bock LEE , Yo Han JEONG , Eun Ji CHOI , Tae Jin HWANG
Abstract: An input/output circuit includes a data buffer group configured to buffer data received through data lines, a data strobe buffer configured to buffer a data strobe signal to output a buffered data strobe clock, a digitally controlled delay line configured to output delay data by controlling skew of the buffered data according to a delay code, a data strobe clock output circuit configured to generate a delay data strobe clock in response to the buffered data strobe clock, a sampler configured to sample the delay data according to the delay data strobe clock to output sampled data, and a de-skew circuit configured to update the delay code according to the sampled data.
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公开(公告)号:US20150076703A1
公开(公告)日:2015-03-19
申请号:US14550445
申请日:2014-11-21
Applicant: SK hynix Inc.
Inventor: Chang Kun PARK , Seong Hwi SONG , Yong Ju KIM , Sung Woo HAN , Hee Woong SONG , Ic Su OH , Hyung Soo KIM , Tae Jin HWANG , Hae Rang CHOI , Ji Wang LEE , Jae Min JANG
IPC: H01L23/00 , H01L27/105
CPC classification number: H01L24/06 , H01L23/5286 , H01L24/09 , H01L27/1052 , H01L2224/061 , H01L2224/0612 , H01L2224/06515 , H01L2224/091 , H01L2224/09515 , H01L2924/14 , H01L2924/1434 , H01L2924/30101 , H01L2924/3011 , H01L2924/00
Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
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公开(公告)号:US20180294784A1
公开(公告)日:2018-10-11
申请号:US15668097
申请日:2017-08-03
Applicant: SK hynix Inc.
Inventor: Dong Hyun KIM , Eun Ji CHOI , Yo Han JEONG , Soon Ku KANG , Woo Jin KANG , Kwan Su SHON , Hyun Bae LEE , Tae Jin HWANG
CPC classification number: H03F3/45076 , G05F1/565 , H03F3/45183 , H03F3/45488 , H03F3/4565 , H03F3/45748 , H03F2200/453 , H03F2203/45008 , H03F2203/45418 , H03M1/00
Abstract: An amplifier may include a differential pair circuit configured to generate an output signal according to a first input signal and a second input signal, a plurality of current sinks coupled between a ground terminal and the differential pair circuit, and a feedback circuit configured to sense a level of the output signal and generate a feedback signal. At least one of the plurality of current sinks is controlled according to the feedback signal.
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公开(公告)号:US20150229300A1
公开(公告)日:2015-08-13
申请号:US14693277
申请日:2015-04-22
Applicant: SK hynix Inc.
Inventor: Tae Jin HWANG
CPC classification number: H03K5/02 , H03F3/45076 , H03K2005/00013 , H04L25/0292 , H04L25/03878 , H04L27/01
Abstract: A receiver circuit includes a first amplification unit, a second amplification unit, a first equalizing unit, and a second equalizing unit. The first amplification unit is configured to differentially amplify an input signal and a reference signal and generate a positive intermediate output signal and a negative intermediate output signal. The second amplification unit is configured to receive the positive intermediate output signal as a positive input signal and the negative intermediate signal as a negative input signal, differentially amplify the positive and negative input signals and generate a positive output signal and a negative output signal. The first equalizing unit is configured to control the level of the negative intermediate output signal in response to the positive output signal. The second equalizing unit is configured to control the level of the positive intermediate output signal in response to the negative output signal
Abstract translation: 接收机电路包括第一放大单元,第二放大单元,第一均衡单元和第二均衡单元。 第一放大单元被配置为差分放大输入信号和参考信号,并产生正的中间输出信号和负的中间输出信号。 第二放大单元被配置为接收正的中间输出信号作为正输入信号,负的中间信号作为负输入信号,差分地放大正输入信号和负输入信号,并产生正输出信号和负输出信号。 第一均衡单元被配置为响应于正输出信号来控制负中间输出信号的电平。 第二均衡单元被配置为响应于负输出信号来控制正中间输出信号的电平
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公开(公告)号:US20160104684A1
公开(公告)日:2016-04-14
申请号:US14960716
申请日:2015-12-07
Applicant: SK hynix Inc.
Inventor: Chang Kun PARK , Seong Hwi SONG , Yong Ju KIM , Sung Woo HAN , Hee Woong SONG , Ic Su OH , Hyung Soo KIM , Tae Jin HWANG , Hae Rang CHOI , Ji Wang LEE , Jae Min JANG
IPC: H01L23/00 , H01L23/528
CPC classification number: H01L24/06 , H01L23/5286 , H01L24/09 , H01L27/1052 , H01L2224/061 , H01L2224/0612 , H01L2224/06515 , H01L2224/091 , H01L2224/09515 , H01L2924/14 , H01L2924/1434 , H01L2924/30101 , H01L2924/3011 , H01L2924/00
Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
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公开(公告)号:US20140003482A1
公开(公告)日:2014-01-02
申请号:US13720424
申请日:2012-12-19
Applicant: SK HYNIX INC.
Inventor: Tae Jin HWANG
IPC: H04L27/01
CPC classification number: H03K5/02 , H03F3/45076 , H03K2005/00013 , H04L25/0292 , H04L25/03878 , H04L27/01
Abstract: A receiver circuit includes a first amplification unit, a second amplification unit, a first equalizing unit, and a second equalizing unit. The first amplification unit is configured to differentially amplify an input signal and a reference signal and generate a first intermediate output signal and a second intermediate output signal. The second amplification unit is configured to differentially amplify the first and second intermediate output signals and generate an output signal. The first equalizing unit is configured to control the level of the second intermediate output signal in response to the output signal. And the second equalizing unit is configured to control the level of the first intermediate output signal in response to the output signal.
Abstract translation: 接收机电路包括第一放大单元,第二放大单元,第一均衡单元和第二均衡单元。 第一放大单元被配置为差分放大输入信号和参考信号,并产生第一中间输出信号和第二中间输出信号。 第二放大单元被配置为差分放大第一和第二中间输出信号并产生输出信号。 第一均衡单元被配置为响应于输出信号来控制第二中间输出信号的电平。 并且第二均衡单元被配置为响应于输出信号来控制第一中间输出信号的电平。
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公开(公告)号:US20200326741A1
公开(公告)日:2020-10-15
申请号:US16673289
申请日:2019-11-04
Applicant: SK hynix Inc.
Inventor: Tae Jin HWANG
IPC: G05F3/26
Abstract: A voltage generator includes a bias voltage generation circuit and a compensation circuit. The bias voltage generation circuit generates a first bias voltage based on a reference current and generates a second bias voltage based on the first bias voltage. The compensation circuit changes a voltage level of the first bias voltage based on the second bias voltage.
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公开(公告)号:US20160149575A1
公开(公告)日:2016-05-26
申请号:US14550544
申请日:2014-11-21
Applicant: SK hynix Inc.
Inventor: Tae Jin HWANG
IPC: H03K19/003
CPC classification number: H03K19/00384
Abstract: A buffer circuit includes an amplification unit suitable for sensing and amplifying an input signal and a reference voltage, a buffer enable unit suitable for enabling the amplification unit based on a buffer enable signal, and a buffer enable signal generation unit suitable for generating the buffer enable signal based on a first or second operation control signal, selected according to a high voltage detection signal.
Abstract translation: 缓冲电路包括适于感测和放大输入信号和参考电压的放大单元,适用于基于缓冲器使能信号使得放大单元能够使能的缓冲器使能单元和适于产生缓冲器使能的缓冲器使能信号生成单元 基于根据高电压检测信号选择的第一或第二操作控制信号的信号。
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公开(公告)号:US20150076614A1
公开(公告)日:2015-03-19
申请号:US14550328
申请日:2014-11-21
Applicant: SK hynix Inc.
Inventor: Chang Kun PARK , Seong Hwi SONG , Yong Ju KIM , Sung Woo HAN , Hee Woong SONG , Ic Su OH , Hyung Soo KIM , Tae Jin HWANG , Hae Rang CHOI , Ji Wang LEE , Jae Min JANG
IPC: H01L23/00 , H01L27/105
CPC classification number: H01L24/06 , H01L23/5286 , H01L24/09 , H01L27/1052 , H01L2224/061 , H01L2224/0612 , H01L2224/06515 , H01L2224/091 , H01L2224/09515 , H01L2924/14 , H01L2924/1434 , H01L2924/30101 , H01L2924/3011 , H01L2924/00
Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.
Abstract translation: 半导体存储器件包括具有芯片焊盘形成区域的半导体电路基板。 在芯片焊盘区域一侧的半导体电路基板上形成一对数据线。 一对数据线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸。 这对数据线被布置为彼此相邻并且接收一对差分数据信号。 电源线形成在芯片焊盘区域的另一侧的半导体电路基板上。 电源线沿着半导体电路基板的芯片焊盘区域延伸的方向延伸,并且电源线接收电力。
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