ETCHING METHOD USING PLASMA, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD

Invention Application

US20160111298A1 ETCHING METHOD USING PLASMA, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD 有权

Title translation: 使用等离子体的蚀刻方法以及包括蚀刻方法的制造半导体器件的方法

Please log in to see more content

Patent Title: ETCHING METHOD USING PLASMA, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD
Patent Title (中): 使用等离子体的蚀刻方法以及包括蚀刻方法的制造半导体器件的方法
Application No.: US14819904

Application Date: 2015-08-06
Publication No.: US20160111298A1

Publication Date: 2016-04-21
Inventor: Go-jun Kim , Vladimir Volynets , Sang-jin An , Hee-jeon Yang , Sang-heon Lee , Sung-keun Cho , Xinglong Chen , In-ho Choi
Applicant: Go-jun Kim , Vladimir Volynets , Sang-jin An , Hee-jeon Yang , Sang-heon Lee , Sung-keun Cho , Xinglong Chen , In-ho Choi
Main IPC: H01L21/311
IPC: H01L21/311

ETCHING METHOD USING PLASMA, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD

Abstract:

An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract(Chinese):

使用等离子体的蚀刻方法包括通过向至少一个远程等离子体源（RPS）提供处理气体并向所述至少一个RPS施加电力来产生等离子体，并且通过向处理室供应水（H 2 O）和等离子体来蚀刻蚀刻对象。

Public/Granted literature

US09520301B2 Etching method using plasma, and method of fabricating semiconductor device including the etching method Public/Granted day:2016-12-13

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀