发明申请
- 专利标题： SEMICONDUCTOR DEVICE WITH IMPROVED FIELD PLATE
- 专利标题（中）： 具有改进的现场板的半导体器件
-
申请号： US14517285申请日： 2014-10-17
-
公开(公告)号： US20160111503A1公开(公告)日： 2016-04-21
- 发明人: Helmut Hagleitner , Fabian Radulescu , Saptharishi Sriram , Daniel Etter
- 申请人： Cree, Inc.
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L29/778 ; H01L21/285 ; H01L29/20
摘要：
A transistor device includes a semiconductor body, a spacer layer, and a field plate. The spacer layer is over at least a portion of a surface of the semiconductor body. The field plate is over at least a portion of the spacer layer, and includes a first current carrying layer, a refractory metal interposer layer over the first current carrying layer, and a second current carrying layer over the refractory metal interposer layer. By including the refractory metal interposer layer between the first current carrying layer and the second current carrying layer, the electromigration of metals in the field plate is significantly reduced. Since electromigration of metals in the field plate is a common cause of transistor device failures, reducing the electromigration of metals in the field plate improves the reliability and lifetime of the transistor device.
公开/授权文献
- US09608078B2 Semiconductor device with improved field plate 公开/授权日：2017-03-28
信息查询
IPC分类:
