公开(公告)号：US11594628B2

公开(公告)日：2023-02-28

申请号：US17111561

申请日：2020-12-04

申请人： Cree, Inc.

发明人： Saptharishi Sriram ,  Jennifer Qingzhu Gao ,  Jeremy Fisher ,  Scott Sheppard

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H03F1/02 ,  H03F3/193 ,  H03F3/21

摘要： A gallium nitride based monolithic microwave integrated circuit includes a substrate, a channel layer on the substrate and a barrier layer on the channel layer. A recess is provided in a top surface of the barrier layer. First gate, source and drain electrodes are provided on the barrier layer opposite the channel layer, with a bottom surface of the first gate electrode in direct contact with the barrier layer. Second gate, source and drain electrodes are also provided on the barrier layer opposite the channel layer. A gate insulating layer is provided in the recess in the barrier layer, and the second gate electrode is on the gate insulating layer opposite the barrier layer and extending into the recess. The first gate, source and drain electrodes comprise the electrodes of a depletion mode transistor, and the second gate, source and drain electrodes comprise the electrodes of an enhancement mode transistor.

公开(公告)号：US20220130985A1

公开(公告)日：2022-04-28

申请号：US17325576

申请日：2021-05-20

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Terry Alcorn ,  Dan Namishia ,  Jia Guo ,  Matt King ,  Saptharishi Sriram ,  Jeremy Fisher ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC分类号： H01L29/778 ,  H01L29/40 ,  H01L29/66

摘要： A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.

公开(公告)号：US10892356B2

公开(公告)日：2021-01-12

申请号：US16376596

申请日：2019-04-05

申请人： Cree, Inc.

发明人： Saptharishi Sriram ,  Thomas Smith ,  Alexander Suvorov ,  Christer Hallin

IPC分类号： H01L27/088 ,  H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/40 ,  H01L29/10

摘要： An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

公开(公告)号：US10861963B2

公开(公告)日：2020-12-08

申请号：US16663843

申请日：2019-10-25

申请人： Cree, Inc.

发明人： Saptharishi Sriram ,  Jennifer Qingzhu Gao ,  Jeremy Fisher ,  Scott Sheppard

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H03F1/02 ,  H03F3/193 ,  H03F3/21

摘要： A gallium nitride based monolithic microwave integrated circuit includes a substrate, a channel layer on the substrate and a barrier layer on the channel layer. A recess is provided in a top surface of the barrier layer. First gate, source and drain electrodes are provided on the barrier layer opposite the channel layer, with a bottom surface of the first gate electrode in direct contact with the barrier layer. Second gate, source and drain electrodes are also provided on the barrier layer opposite the channel layer. A gate insulating layer is provided in the recess in the barrier layer, and the second gate electrode is on the gate insulating layer opposite the barrier layer and extending into the recess. The first gate, source and drain electrodes comprise the electrodes of a depletion mode transistor, and the second gate, source and drain electrodes comprise the electrodes of an enhancement mode transistor.

公开(公告)号：US20200066892A1

公开(公告)日：2020-02-27

申请号：US16663843

申请日：2019-10-25

申请人： Cree, Inc.

发明人： Saptharishi Sriram ,  Jennifer Qingzhu Gao ,  Jeremy Fisher ,  Scott Sheppard

IPC分类号： H01L29/778 ,  H03F3/193 ,  H03F3/21 ,  H03F1/02 ,  H01L29/20 ,  H01L29/66

摘要： A gallium nitride based monolithic microwave integrated circuit includes a substrate, a channel layer on the substrate and a barrier layer on the channel layer. A recess is provided in a top surface of the barrier layer. First gate, source and drain electrodes are provided on the barrier layer opposite the channel layer, with a bottom surface of the first gate electrode in direct contact with the barrier layer. Second gate, source and drain electrodes are also provided on the barrier layer opposite the channel layer. A gate insulating layer is provided in the recess in the barrier layer, and the second gate electrode is on the gate insulating layer opposite the barrier layer and extending into the recess. The first gate, source and drain electrodes comprise the electrodes of a depletion mode transistor, and the second gate, source and drain electrodes comprise the electrodes of an enhancement mode transistor.

公开(公告)号：US09755059B2

公开(公告)日：2017-09-05

申请号：US14025478

申请日：2013-09-12

申请人： CREE, INC.

发明人： Saptharishi Sriram

IPC分类号： H01L27/088 ,  H01L29/778 ,  H01L29/40 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/778 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7787

摘要： A transistor device including a cap layer is described. One embodiment of such a device includes cap layer between a gate and a semiconductor layer. In one embodiment, the thickness of the cap layer is between 5 nm and 100 nm. In another embodiment, the cap layer can be doped, such as delta-doped or doped in a region remote from the semiconductor layer. Devices according to the present invention can show capacitances which are less drain bias dependent, resulting in improved linearity.

公开(公告)号：US20130043491A1

公开(公告)日：2013-02-21

申请号：US13652754

申请日：2012-10-16

申请人： Cree, Inc.

发明人： Saptharishi Sriram ,  Qingchun Zhang

IPC分类号： H01L29/872

CPC分类号： H01L29/861 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/868 ,  H01L29/872

摘要： Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein.

摘要翻译： 提供了包括PIN二极管部分和肖特基二极管部分的混合半导体器件。 PIN二极管部分设置在半导体衬底上，并且在半导体衬底的第一表面上具有阳极接触。 肖特基二极管部分也设置在半导体衬底上并且包括在半导体衬底上的多晶硅层和多晶硅层上的欧姆接触。 本文还提供了相关的肖特基二极管。

公开(公告)号：US10978583B2

公开(公告)日：2021-04-13

申请号：US16194760

申请日：2018-11-19

申请人： Cree, Inc.

发明人： Yueying Liu ,  Saptharishi Sriram ,  Scott Sheppard ,  Jennifer Gao

IPC分类号： H01L29/76 ,  H01L29/201 ,  H01L29/10 ,  H01L29/47 ,  H01L29/778 ,  H01L29/423 ,  H01L29/417 ,  H03F3/193 ,  H03F3/21 ,  H01L27/085 ,  H01L29/06 ,  H03F3/42 ,  H03F3/195 ,  H03F1/32 ,  H01L29/20

摘要： A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

公开(公告)号：US20180374943A1

公开(公告)日：2018-12-27

申请号：US15628932

申请日：2017-06-21

申请人： Cree, Inc.

发明人： Yueying Liu ,  Saptharishi Sriram ,  Scott Sheppard

IPC分类号： H01L29/778 ,  H01L29/06 ,  H01L29/423 ,  H01L29/20 ,  H01L27/095 ,  H01L21/8252 ,  H01L29/66 ,  H01L21/326 ,  H01L29/205

摘要： A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

公开(公告)号：US20170373178A1

公开(公告)日：2017-12-28

申请号：US15424209

申请日：2017-02-03

申请人： Cree, Inc.

发明人： Saptharishi Sriram ,  Alexander Suvorov ,  Christer Hallin

IPC分类号： H01L29/778 ,  H01L29/423 ,  H01L29/20 ,  H01L29/167 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/7787 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/66068 ,  H01L29/66431 ,  H01L29/7783

摘要： The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.