Invention Application
- Patent Title: FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS
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Application No.: US14976867Application Date: 2015-12-21
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Publication No.: US20160111525A1Publication Date: 2016-04-21
- Inventor: Kangguo Cheng , Bruce B. Doris , Hong He , Ali Khakifirooz , Yunpeng Yin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/225 ; H01L21/306 ; H01L29/06
Abstract:
A method of forming a semiconductor device that includes forming a silicon including fin structure and forming a germanium including layer on the silicon including fin structure. Germanium is then diffused from the germanium including layer into the silicon including fin structure to convert the silicon including fin structure to silicon germanium including fin structure.
Public/Granted literature
- US09728625B2 Fin formation in fin field effect transistors Public/Granted day:2017-08-08
Information query
IPC分类:
