COST-EFFICIENT HIGH POWER PECVD DEPOSITION FOR SOLAR CELLS

Invention Application

US20160111576A1 COST-EFFICIENT HIGH POWER PECVD DEPOSITION FOR SOLAR CELLS 有权

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Patent Title: COST-EFFICIENT HIGH POWER PECVD DEPOSITION FOR SOLAR CELLS
Application No.: US14976798

Application Date: 2015-12-21
Publication No.: US20160111576A1

Publication Date: 2016-04-21
Inventor: TZE-CHIANG CHEN , AUGUSTIN J. HONG , JEEHWAN KIM , DEVENDRA K. SADANA
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Main IPC: H01L31/077
IPC: H01L31/077 ; H01L31/056 ; H01L31/0224

COST-EFFICIENT HIGH POWER PECVD DEPOSITION FOR SOLAR CELLS

Abstract:

A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Public/Granted literature

US09911888B2 Photovoltaic device having layer with varying crystallinity Public/Granted day:2018-03-06

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/075	...只是PIN型势垒的，例如非晶硅PIN太阳能电池
H01L31/077	....包括单晶或多晶材料的装置