公开(公告)号：US20200058811A1

公开(公告)日：2020-02-20

申请号：US16661413

申请日：2019-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  King Abdulaziz City for Science and Technology

Inventor： ABDULRAHMAN M. ALBADRI ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  KATHERINE L. SAENGER

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747

Abstract: A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.

公开(公告)号：US20190207000A1

公开(公告)日：2019-07-04

申请号：US16299926

申请日：2019-03-12

Applicant: International Business Machines Corporation

Inventor： STEPHEN W. BEDELL ,  NICOLAS J. LOUBET ,  DEVENDRA K. SADANA

IPC: H01L29/10 ,  H01L27/092 ,  H01L29/78 ,  H01L29/06 ,  H01L29/165 ,  H01L27/11 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/1054 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7851

Abstract: An n-doped field effect transistor (nFET) section of an integrated device logic region is provided. The nFET section includes a semiconductor substrate, a layer at least partially formed of silicon germanium (SiGe) disposed on the semiconductor substrate and fin formations. The fin formations are formed on the layer. Each fin formation includes a first fin portion that is at least partially formed of silicon (Si) and a second fin portion that is at least partially formed of hard mask material. The layer is etched to include free surfaces that facilitate elastic relaxation of SiGe therein and a corresponding application of tension in Si of the first fin portion of each of the fin formations.

公开(公告)号：US20180254361A1

公开(公告)日：2018-09-06

申请号：US15966864

申请日：2018-04-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/028 ,  H01L31/0747

CPC classification number: H01L31/0747 ,  H01L31/022458 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.

公开(公告)号：US20170138858A1

公开(公告)日：2017-05-18

申请号：US14942072

申请日：2015-11-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： YANN ASTIER ,  HUAN HU ,  NING LI ,  DEVENDRA K. SADANA ,  JOSHUA T. SMITH ,  WILLIAM T. SPRATT

IPC: G01N21/64 ,  H01L33/06 ,  H01L33/30 ,  H01L31/173 ,  H01L33/44 ,  H01L31/0352 ,  H01L31/0288 ,  H01L33/24 ,  H01L33/32

CPC classification number: G01N21/6428 ,  B01L3/5027 ,  B01L3/502753 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2400/0421 ,  B82Y15/00 ,  G01N21/645 ,  G01N2021/0346 ,  G01N2021/6439 ,  G01N2201/062 ,  H01L31/0288 ,  H01L31/035227 ,  H01L31/173 ,  H01L33/06 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44

Abstract: Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

公开(公告)号：US20160359068A1

公开(公告)日：2016-12-08

申请号：US15235216

申请日：2016-08-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0465 ,  H01L31/077 ,  H01L31/076 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0224

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US20160300965A1

公开(公告)日：2016-10-13

申请号：US15189925

申请日：2016-06-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bay Zu Precision Co., LTD.

Inventor： SHUN-MING CHEN ,  CHIEN-CHIH HUANG ,  JOEL P. DESOUZA ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  CHIEN-YEH KU ,  DEVENDRA K. SADANA ,  CHUAN-WEN WANG

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/075

CPC classification number: H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

Abstract translation: 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。

公开(公告)号：US20160079456A1

公开(公告)日：2016-03-17

申请号：US14949230

申请日：2015-11-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0376 ,  H01L31/075 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/03767 ,  H01L31/022466 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.

公开(公告)号：US20160020344A1

公开(公告)日：2016-01-21

申请号：US14867553

申请日：2015-09-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/068 ,  H01L31/028

CPC classification number: H01L31/022458 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.

Abstract translation: 光电器件和方法包括结晶衬底和形成为与衬底接触的发射极接触部分。 背表面场结包括与晶体衬底接触形成的均匀结层，并且具有与衬底相同的导电类型和更高的有源掺杂密度。 均匀结层包括小于均匀结层中的少数载流子的扩散长度的厚度。 形成与与衬底相对的均匀接合层接触的钝化层，其不掺杂或具有与衬底相同的导电类型。

公开(公告)号：US20150318425A1

公开(公告)日：2015-11-05

申请号：US14796546

申请日：2015-07-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: H01L31/0475 ,  H01L31/05

CPC classification number: H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

Abstract translation: 一种用于制造具有集成光伏电池的器件的方法包括在第一处理衬底上支撑半导体衬底并掺杂半导体衬底以形成具有相反导电性的掺杂交替区域。 掺杂层形成在半导体衬底的第一侧上。 在掺杂层上图案化导电材料以形成导电岛，使得导电岛与交替区对准以限定在单片结构上串联连接的多个光伏电池。

公开(公告)号：US20150247259A1

公开(公告)日：2015-09-03

申请号：US14711403

申请日：2015-05-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: C30B25/18 ,  C30B29/06 ,  C30B25/10

Abstract: An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

Abstract translation: 外延生长方法包括提供衬底材料的暴露的结晶区域。 硅在低温工艺中外延沉积在衬底材料上，其中淀积温度低于500摄氏度。 源气体用稀释气体稀释，稀释气体与原料气体的气体比小于1000。