Invention Application
US20160111594A1 Optoelectronic Component And Method For The Production Thereof 有权
光电元件及其制作方法

Optoelectronic Component And Method For The Production Thereof
Abstract:
An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).
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