公开(公告)号：US20170005079A1

公开(公告)日：2017-01-05

申请号：US15113749

申请日：2015-01-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Lutz HOEPPEL ,  Juergen MOOSBURGER ,  Andreas PLOESSL ,  Patrick RODE ,  Peter NAGEL ,  Dominik SCHOLZ

IPC: H01L25/16 ,  H01L33/58 ,  H01L31/147 ,  H01L31/0232 ,  H01L25/00 ,  H01L31/18

CPC classification number: H01L25/167 ,  H01L25/50 ,  H01L31/02327 ,  H01L31/147 ,  H01L31/18 ,  H01L33/486 ,  H01L33/58 ,  H01L2224/96 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).

Abstract translation: 提供了一种用于制造多个光电子半导体部件（100）的方法，包括以下步骤：a）提供辅助载体（2）; b）提供多个半导体芯片（10），其中每个半导体芯片具有布置在载体主体的上侧（22）上的载体主体（12）和半导体本体（4） c）将多个半导体芯片附接在辅助载体上，其中半导体芯片在横向（L）上彼此间隔开，并且其中半导体主体面向辅助载体，如从载体主体所见; d）至少在相邻半导体芯片的半导体主体之间的区域中形成散射层（18）; e）形成复合包装（20）; f）拆下辅助载体（2）; 以及g）将所述复合封装单独地分离成多个光电子半导体部件（100）。

公开(公告)号：US20160111594A1

公开(公告)日：2016-04-21

申请号：US14889316

申请日：2014-05-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Peter NAGEL ,  Stefan ILLEK ,  Martin STRASSBURG

IPC: H01L33/10 ,  H01L33/06 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/10 ,  H01L33/005 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08

Abstract: An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).

Abstract translation: 具有包括第一光活性层（140）和第二光活性层（240）的半导体层结构（100,1100）的光电子器件（10,1010）。 在第一光活性层（140）和第二光活性层（240）之间形成第一隧道结（200）。 第一布拉格反射器（160）形成在第一光活性层（140）和第一隧道结（200）之间。 第二布拉格反射器（260）形成在第二光活性层（240）和第一隧道结（200）之间。