Invention Application
US20160111867A1 METHODS OF POST-PROCESS DISPENSATION OF PLASMA INDUCED DAMAGE PROTECTION COMPONENT
审中-公开
等离子体诱导损伤保护组分的后处理方法
- Patent Title: METHODS OF POST-PROCESS DISPENSATION OF PLASMA INDUCED DAMAGE PROTECTION COMPONENT
- Patent Title (中): 等离子体诱导损伤保护组分的后处理方法
-
Application No.: US14517605Application Date: 2014-10-17
-
Publication No.: US20160111867A1Publication Date: 2016-04-21
- Inventor: Arnaud Bousquet , Geetha Sai Aluri , Suresh Uppal
- Applicant: GlobalFoundries, Inc.
- Main IPC: H02H3/08
- IPC: H02H3/08 ; H01L23/525 ; H01L29/78 ; H01L49/02 ; H01L21/8234 ; H01L29/66 ; H01L21/66 ; H01L27/02
Abstract:
At least one method, apparatus and system disclosed herein involves providing an integrated circuit device comprising a protection circuit. And integrated circuit device is formed. A protection component is formed in parallel to the integrated circuit device. The protection component is configured for protecting the integrated circuit device from a portion of a charge. A circuit break device in series to the protection component, wherein the protection component and the circuit break device are in parallel to the integrated circuit device. The circuit break device is configured to break an electrical path of the protection component for electrically terminating the protection component based upon a current signal.
Public/Granted literature
- US10181713B2 Methods of post-process dispensation of plasma induced damage protection component Public/Granted day:2019-01-15
Information query
