METHODS OF POST-PROCESS DISPENSATION OF PLASMA INDUCED DAMAGE PROTECTION COMPONENT
    2.
    发明申请
    METHODS OF POST-PROCESS DISPENSATION OF PLASMA INDUCED DAMAGE PROTECTION COMPONENT 审中-公开
    等离子体诱导损伤保护组分的后处理方法

    公开(公告)号:US20160111867A1

    公开(公告)日:2016-04-21

    申请号:US14517605

    申请日:2014-10-17

    Abstract: At least one method, apparatus and system disclosed herein involves providing an integrated circuit device comprising a protection circuit. And integrated circuit device is formed. A protection component is formed in parallel to the integrated circuit device. The protection component is configured for protecting the integrated circuit device from a portion of a charge. A circuit break device in series to the protection component, wherein the protection component and the circuit break device are in parallel to the integrated circuit device. The circuit break device is configured to break an electrical path of the protection component for electrically terminating the protection component based upon a current signal.

    Abstract translation: 本文公开的至少一种方法,装置和系统涉及提供包括保护电路的集成电路装置。 并形成集成电路器件。 保护部件与集成电路器件并联形成。 保护部件被配置为保护集成电路器件免受电荷的一部分的影响。 一种与保护部件串联的断路装置,其中保护部件和断路装置与集成电路装置并联。 断路装置被配置为基于电流信号中断保护部件的电气路径以电气端接保护部件。

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