发明申请
US20160118462A1 FinFET with an Asymmetric Source/Drain Structure and Method of Making Same
审中-公开
具有不对称源极/漏极结构的FinFET及其制造方法
- 专利标题： FinFET with an Asymmetric Source/Drain Structure and Method of Making Same
- 专利标题（中）： 具有不对称源极/漏极结构的FinFET及其制造方法
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申请号： US14987351申请日： 2016-01-04
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公开(公告)号： US20160118462A1公开(公告)日： 2016-04-28
- 发明人: Hsiang-Jen Tseng , Ting-Wei Chiang , Wei-Yu Chen , Kuo-Nan Yang , Ming-Hsiang Song , Ta-Pen Guo
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L21/306 ; H01L29/78 ; H01L21/283 ; H01L29/417 ; H01L27/088 ; H01L29/66 ; H01L21/8234
摘要：
Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is a semiconductor device comprising a first semiconductor fin extending above a substrate, a first source region on the first semiconductor fin, and a first drain region on the first semiconductor fin. The first source region has a first width and the first drain region has a second width with the second width being different than the first width.
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