Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US14922340Application Date: 2015-10-26
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Publication No.: US20160118961A1Publication Date: 2016-04-28
- Inventor: Masashi Nagasato
- Applicant: Rohm Co., Ltd.
- Priority: JP2014218103 20141027
- Main IPC: H03K3/015
- IPC: H03K3/015 ; H02P27/04 ; H03K17/687

Abstract:
A semiconductor device disclosed in the present specification has a structure that includes: a first terminal that is to be externally connected to a power source line; a second terminal that is to be externally connected to a ground line; a third terminal that is internally connected to the first terminal and to be externally connected to a first terminal of a bypass capacitor; and a fourth terminal that is internally connected to the second terminal and to be externally connected to a second terminal of the bypass capacitor.
Public/Granted literature
- US09929689B2 Semiconductor device Public/Granted day:2018-03-27
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