Invention Application
US20160126149A1 METHOD FOR PROCESSING A SUBSTRATE AND A METHOD OF PROCESS SCREENING FOR INTEGRATED CIRCUITS
有权
用于处理基板的方法和用于集成电路的处理筛选方法
- Patent Title: METHOD FOR PROCESSING A SUBSTRATE AND A METHOD OF PROCESS SCREENING FOR INTEGRATED CIRCUITS
- Patent Title (中): 用于处理基板的方法和用于集成电路的处理筛选方法
-
Application No.: US14527811Application Date: 2014-10-30
-
Publication No.: US20160126149A1Publication Date: 2016-05-05
- Inventor: Rudolf Zelsacher , Peter Irsigler , Erich Griebl , Manfred Pirker , Andreas Moser
- Applicant: Infineon Technologies AG
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/02 ; H01L21/768 ; H01L21/28 ; H01L29/66

Abstract:
According to various embodiments, a method for processing a substrate may include: forming a dielectric layer over the substrate, the dielectric layer may include a plurality of test regions; forming an electrically conductive layer over the dielectric layer to contact the dielectric layer in the plurality of test regions; simultaneously electrically examining the dielectric layer in the plurality of test regions, wherein portions of the electrically conductive layer contacting the dielectric layer in the plurality of test regions are electrically conductively connected with each other by an electrically conductive material; and separating the electrically conductive layer into portions of the electrically conductive layer contacting the dielectric layer in the plurality of test regions from each other.
Public/Granted literature
- US09406572B2 Method for processing a substrate and a method of process screening for integrated circuits Public/Granted day:2016-08-02
Information query
IPC分类: