发明申请
US20160126422A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
半导体发光器件及其制造方法

  • 专利标题: SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
  • 专利标题(中): 半导体发光器件及其制造方法
  • 申请号: US14651818
    申请日: 2013-12-04
  • 公开(公告)号: US20160126422A1
    公开(公告)日: 2016-05-05
  • 发明人: Soo Kun JEONEun Hyun PARK
  • 申请人: SEMICON LIGHT CO., LTD.
  • 申请人地址: KR Yongin-si Gyeonggi-do
  • 专利权人: SEMICON LIGHT CO., LTD.
  • 当前专利权人: SEMICON LIGHT CO., LTD.
  • 当前专利权人地址: KR Yongin-si Gyeonggi-do
  • 优先权: KR10-2012-0139553 20121204; KR10-2013-0002951 20130110; KR10-2013-0002952 20130110
  • 国际申请: PCT/KR2013/011173 WO 20131204
  • 主分类号: H01L33/46
  • IPC分类号: H01L33/46 H01L33/38 H01L33/24
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要:
A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.
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