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    Semiconlight Light Emitting Diode
    1.
    发明申请
    Semiconlight Light Emitting Diode 有权

    公开(公告)号：US20210265539A1

    公开(公告)日：2021-08-26

    申请号：US16984766

    申请日：2020-08-04

    申请人： SEMICON LIGHT CO., LTD.

    发明人： Eun Hyun PARK ,  Kyoung Min KIM ,  Bong Hwan KIM

    IPC分类号： H01L33/58 ,  H01L25/075 ,  H01L33/62

    摘要： Disclosed is a semiconductor light emitting device comprising: an external substrate; a first semiconductor light emitting device chip provided on the external substrate, comprising a first plurality of semiconductor layers including a first active layer for generating ultraviolet light by recombination of electrons and holes, and a first electrode electrically connected to the first plurality of semiconductor layers; a lens configured to surround the first semiconductor light emitting device chip, the lens serving to refract the ultraviolet light from the first semiconductor light emitting device chip and forming an orientation angle within a predefined range; and, a second semiconductor light emitting device chip provided on the external substrate, the second semiconductor light emitting device comprising a second plurality of semiconductor layers including a second active layer for generating visible light by recombination of electrons and holes, and a second electrode electrically connected to the second plurality of semiconductor layers.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20160126422A1

    公开(公告)日：2016-05-05

    申请号：US14651818

    申请日：2013-12-04

    申请人： SEMICON LIGHT CO., LTD.

    发明人： Soo Kun JEON ,  Eun Hyun PARK

    IPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/24

    CPC分类号： H01L33/46 ,  H01L31/0248 ,  H01L31/0352 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L51/50 ,  H01L2933/0025

    摘要： A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.

    摘要翻译： 本公开的半导体发光器件包括多个半导体层; 在所述多个半导体层的内部具有第一斜面的第一倾斜面，其将所述第一半导体层的被蚀刻暴露的表面与所述第二半导体层的表面连接，并将来自所述有源层的光反射到所述第一半导体层; 设置在所述多个半导体层周围的第二倾斜度大于所述第一斜率的第二倾斜面，并将来自所述有源层的光反射朝向所述第一半导体层; 形成在所述第二半导体层上的用于将来自所述有源层的光朝向所述第一半导体层反射的非导电反射膜。