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公开(公告)号：US11309457B2
公开(公告)日：2022-04-19
申请号：US16068081
申请日：2017-01-05
发明人： Soo Kun Jeon , Geun Mo Jin , Jun Chun Park , Yeon Ho Jeong , Il Gyun Choi
IPC分类号： H01L33/38 , H01L27/15 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/46 , H01L33/62
摘要： Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.
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公开(公告)号：US20210265539A1
公开(公告)日：2021-08-26
申请号：US16984766
申请日：2020-08-04
发明人： Eun Hyun PARK , Kyoung Min KIM , Bong Hwan KIM
IPC分类号： H01L33/58 , H01L25/075 , H01L33/62
摘要： Disclosed is a semiconductor light emitting device comprising: an external substrate; a first semiconductor light emitting device chip provided on the external substrate, comprising a first plurality of semiconductor layers including a first active layer for generating ultraviolet light by recombination of electrons and holes, and a first electrode electrically connected to the first plurality of semiconductor layers; a lens configured to surround the first semiconductor light emitting device chip, the lens serving to refract the ultraviolet light from the first semiconductor light emitting device chip and forming an orientation angle within a predefined range; and, a second semiconductor light emitting device chip provided on the external substrate, the second semiconductor light emitting device comprising a second plurality of semiconductor layers including a second active layer for generating visible light by recombination of electrons and holes, and a second electrode electrically connected to the second plurality of semiconductor layers.
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公开(公告)号：US20190081221A1
公开(公告)日：2019-03-14
申请号：US16083024
申请日：2017-03-07
发明人： Soo Kun JEON , Kyoung Min KIM , Eun Hyun PARK , Young Kwan CHO , Gye Oul JEONG , Dong So JUNG , Seung Ho BAEK , Eung Suk PARK , Hye Ji RHEE
摘要： Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a hole—defining inner face of the bottom part has a plurality of angles of inclination.
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公开(公告)号：US10205060B2
公开(公告)日：2019-02-12
申请号：US15118235
申请日：2015-02-11
发明人： Soo Kun Jeon
摘要： Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers; a non-conductive reflective film coupled to the plurality of the semiconductor layers; and one or more electrodes formed on the non-conductive reflective film and electrically connected to the plurality of semiconductor layers, in which the one or more electrodes respectively include a lower electrode layer for reflecting light generated in the active layer and then passed the non-conductive reflective film, and an upper electrode layer arranged on the lower electrode layer for preventing a foreign material from penetrating into the lower electrode layer.
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公开(公告)号：USD793002S1
公开(公告)日：2017-07-25
申请号：US29569234
申请日：2016-06-24
设计人： Kyoung Min Kim , Soo Kun Jeon , Eun Hyun Park
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公开(公告)号：US09691944B2
公开(公告)日：2017-06-27
申请号：US14651818
申请日：2013-12-04
发明人： Soo Kun Jeon , Eun Hyun Park
IPC分类号： H01L33/00 , H01L33/46 , H01L33/20 , H01L33/24 , H01L33/38 , H01L31/0248 , H01L51/50 , H01L33/02 , H01L33/08 , H01L31/0352
CPC分类号： H01L33/46 , H01L31/0248 , H01L31/0352 , H01L33/0095 , H01L33/025 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/382 , H01L33/42 , H01L51/50 , H01L2933/0025
摘要： A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.
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公开(公告)号：US20170125641A1
公开(公告)日：2017-05-04
申请号：US15316125
申请日：2015-06-03
发明人： Soo Kun JEON , Tae Hyun KIM , Tea Jin KIM , Jun Chun PARK , Byeong Seob KIM , Jong Won KIM , Ki Man PARK
CPC分类号： H01L33/46 , H01L27/153 , H01L33/0025 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/382 , H01L2933/0025
摘要： Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.
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公开(公告)号：US09530941B2
公开(公告)日：2016-12-27
申请号：US14118602
申请日：2013-07-18
发明人： Soo Kun Jeon , Eun Hyun Park , Yong Deok Kim
CPC分类号： H01L33/46 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44
摘要： The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including an active layer, generating light via electron-hole recombination; a first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.
摘要翻译： 本公开涉及一种半导体发光器件，包括：多个半导体层，包括有源层，通过电子 - 空穴复合产生光; 第一电极; 耦合到所述多个半导体层的非导电分布式布拉格反射器，反射来自所述有源层的光; 以及第一透光膜，其相对于所述非导电分布布拉格反射器从与所述多个半导体层相反的一侧耦合到所述分布式布拉格反射器，其中所述第一透光膜的折射率低于有效折射率 分布式布拉格反射器的折射率。
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公开(公告)号：US20150155426A1
公开(公告)日：2015-06-04
申请号：US14118597
申请日：2013-07-18
发明人： Soo Kun Jeon , Eun Hyun Park , Yong Deok Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/005 , H01L33/007 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/16245 , H01L2933/0025 , H01L2933/0058
摘要： The present disclosure relates to a method of manufacturing a semiconductor light emitting device, comprising: forming a finger electrode in electrical communication with a second semiconductor layer; forming, on the finger electrode, a non-conductive reflective layer made up of a multi-layer dielectric film, for reflecting light from the active layer towards a first semiconductor layer on the side of a growth substrate, with the non-conductive reflective layer including a bottom layer formed by chemical vapor deposition and at least two layers formed by physical vapor deposition; and forming an electrical connection, passing through the non-conductive reflective film and being connected the finger electrode.
摘要翻译： 本公开涉及一种制造半导体发光器件的方法，包括：形成与第二半导体层电连通的指状电极; 在指状电极上形成由多层电介质膜构成的非导电性反射层，用于将来自有源层的光朝向生长衬底侧的第一半导体层反射，使非导电性反射层 包括通过化学气相沉积形成的底层和通过物理气相沉积形成的至少两层; 并形成电连接，穿过非导电反射膜并连接指状电极。
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公开(公告)号：US11600755B2
公开(公告)日：2023-03-07
申请号：US16964091
申请日：2019-04-23
发明人： Soo Kun Jeon , Young Un Gil
摘要： Disclosed is a semiconductor light emitting device comprising: a substrate; a first semiconductor layer, which is provided on the substrate and has a first conductivity; an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination; a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a second region that includes a plurality of protruded parts of the active layer and the second semiconductor layer protruded from the first semiconductor layer as seen in cross-sectional view and recesses between the protruded parts; and a first region surrounding the second region.
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