Invention Application
US20160133513A1 METAL OXYSILICATE DIFFUSION BARRIERS FOR DAMASCENE METALLIZATION WITH LOW RC DELAYS AND METHODS FOR FORMING THE SAME
有权
金属氧化物扩散阻挡层，用于具有低RC延迟的金相冶金及其形成方法
- Patent Title: METAL OXYSILICATE DIFFUSION BARRIERS FOR DAMASCENE METALLIZATION WITH LOW RC DELAYS AND METHODS FOR FORMING THE SAME
- Patent Title (中): 金属氧化物扩散阻挡层，用于具有低RC延迟的金相冶金及其形成方法
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Application No.: US14920867Application Date: 2015-10-22
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Publication No.: US20160133513A1Publication Date: 2016-05-12
- Inventor: Ganesh HEGDE , Mark RODDER , Rwik SENGUPTA , Chris BOWEN
- Applicant: Samsung Electronics Co., Ltd.
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A method is disclosed to form a metal-oxysilicate diffusion barrier for a damascene metallization. A trench is formed in an Inter Layer Dielectric (ILD) material. An oxysilicate formation-enhancement layer comprising silicon, carbon, oxygen, a constituent component of the ILD, or a combination thereof, is formed in the trench. A barrier seed layer is formed on the oxysilicate formation-enhancement layer comprising an elemental metal selected from a first group of elemental metals in combination with an elemental metal selected from a second group of elemental metals. An elemental metal in the second group is immiscible in copper or an alloy thereof, has a diffusion constant greater than a self-diffusion of copper or an alloy thereof; does not reducing silicon-oxygen bonds during oxysilicate formation; and promotes adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer. The structure is then annealed to form a metal-oxysilicate diffusion barrier.
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