公开(公告)号：US20160148870A1

公开(公告)日：2016-05-26

申请号：US14931845

申请日：2015-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ganesh HEGDE ,  Mark RODDER ,  Jorge KITTL ,  Chris BOWEN

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/225 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/225 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A diffusion barrier and a method to form the diffusion bather are disclosed. A trench structure is formed in an Inter Layer Dielectric (ILD). The ILD comprises a dielectric matrix having a first density. A dopant material layer is formed on the trench structure in which the dopant material layer comprises atoms of at least one of a rare-earth element. The ILD and the trench structure are annealed to form a dielectric matrix comprising a second density in one or more regions of the ILD on which the dopant material layer was formed that is greater than the first density. After annealing, the dielectric matrix comprising the second density includes increased bond lengths of oxygen-silicon bonds and/or oxygen-semiconductor bonds, increased bond angles of oxygen-silicon bonds and/or oxygen-semiconductor material bonds, and pores in the dielectric matrix are sealed compared to the dielectric matrix comprising the first density.

Abstract translation: 公开了扩散阻挡层和形成扩散浴的方法。 在层间电介质（ILD）中形成沟槽结构。 ILD包括具有第一密度的介电矩阵。 掺杂剂材料层形成在沟槽结构中，其中掺杂剂材料层包含稀土元素中的至少一种的原子。 对ILD和沟槽结构进行退火以在ILD的一个或多个区域中形成包含第二密度的介质矩阵，其上形成有大于第一密度的掺杂剂材料层。 在退火之后，包括第二密度的介电矩阵包括增加的氧 - 硅键和/或氧 - 半键键的键长度，增加的氧 - 硅键和/或氧 - 半导体材料键的键角以及介电矩阵中的孔 与包含第一密度的介电矩阵相比是密封的。

公开(公告)号：US20170263728A1

公开(公告)日：2017-09-14

申请号：US15267134

申请日：2016-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. KITTL ,  Ganesh HEGDE ,  Robert Christopher BOWEN ,  Borna J. OBRADOVIC ,  Mark S. RODDER

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02485 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/465 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/7848 ,  H01L29/7853

Abstract: A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each sacrificial layer has a first lattice parameter; and at least one channel layer that has a second lattice parameter in which the first lattice parameter is less than or equal to the second lattice parameter, and each channel layer is disposed between and in contact with two sacrificial layers and includes a compressive strain or a neutral strain based on a difference between the first lattice parameter and the second lattice parameter.

公开(公告)号：US20160133513A1

公开(公告)日：2016-05-12

申请号：US14920867

申请日：2015-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ganesh HEGDE ,  Mark RODDER ,  Rwik SENGUPTA ,  Chris BOWEN

IPC: H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L2221/1089

Abstract: A method is disclosed to form a metal-oxysilicate diffusion barrier for a damascene metallization. A trench is formed in an Inter Layer Dielectric (ILD) material. An oxysilicate formation-enhancement layer comprising silicon, carbon, oxygen, a constituent component of the ILD, or a combination thereof, is formed in the trench. A barrier seed layer is formed on the oxysilicate formation-enhancement layer comprising an elemental metal selected from a first group of elemental metals in combination with an elemental metal selected from a second group of elemental metals. An elemental metal in the second group is immiscible in copper or an alloy thereof, has a diffusion constant greater than a self-diffusion of copper or an alloy thereof; does not reducing silicon-oxygen bonds during oxysilicate formation; and promotes adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer. The structure is then annealed to form a metal-oxysilicate diffusion barrier.

Abstract translation: 公开了一种用于形成金属 - 氧硅酸盐扩散屏障用于大马士革金属化的方法。 在层间电介质（ILD）材料中形成沟槽。 在沟槽中形成包含硅，碳，氧，ILD的组成成分或其组合的氧硅酸盐形成增强层。 在氧硅酸盐形成增强层上形成阻挡种子层，其包含选自第一组元素金属的元素金属和选自第二组元素金属的元素金属。 第二组中的元素金属在铜或其合金中是不混溶的，其扩散常数大于铜或其合金的自扩散; 在氧硅酸盐形成过程中不会降低硅 - 氧键; 并且促进铜或铜合金与金属 - 氧硅酸盐屏障扩散层的粘附。 然后将该结构退火以形成金属 - 氧硅酸盐扩散阻挡层。

公开(公告)号：US20160035675A1

公开(公告)日：2016-02-04

申请号：US14809266

申请日：2015-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ganesh HEGDE ,  Mark S. RODDER ,  Jorge A. KITTL ,  Robert C. BOWEN

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/321 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A damascene interconnect structure may be formed by forming a trench in an ILD. A diffusion barrier may be deposited on trench surfaces, followed by a first liner material. The first liner material may be removed from a bottom surface of the trench. A second liner material may be directionally deposited on the bottom. A conductive seed layer may be deposited on the first and second liner materials, and a conductive material may fill in the trench. A CMP process can remove excess material from the top of the structure. A damascene interconnect may include a dielectric having a trench, a first liner layer arranged on trench sidewalls, and a second liner layer arranged on a trench bottom. A conductive material may fill the trench. The first liner material may have low wettability and the second liner material may have high wettability with respect to the conductive material.

Abstract translation: 可以通过在ILD中形成沟槽来形成镶嵌互连结构。 扩散阻挡层可以沉积在沟槽表面上，随后是第一衬里材料。 可以从沟槽的底表面去除第一衬里材料。 第二衬里材料可以定向沉积在底部。 可以在第一和第二衬垫材料上沉积导电种子层，并且导电材料可以填充在沟槽中。 CMP工艺可以从结构的顶部去除多余的材料。 镶嵌互连件可以包括具有沟槽的电介质，布置在沟槽侧壁上的第一衬垫层和布置在沟槽底部上的第二衬垫层。 导电材料可以填充沟槽。 第一衬里材料可以具有低润湿性，并且第二衬里材料相对于导电材料可具有高润湿性。