公开(公告)号：US20160148870A1

公开(公告)日：2016-05-26

申请号：US14931845

申请日：2015-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ganesh HEGDE ,  Mark RODDER ,  Jorge KITTL ,  Chris BOWEN

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/225 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/225 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A diffusion barrier and a method to form the diffusion bather are disclosed. A trench structure is formed in an Inter Layer Dielectric (ILD). The ILD comprises a dielectric matrix having a first density. A dopant material layer is formed on the trench structure in which the dopant material layer comprises atoms of at least one of a rare-earth element. The ILD and the trench structure are annealed to form a dielectric matrix comprising a second density in one or more regions of the ILD on which the dopant material layer was formed that is greater than the first density. After annealing, the dielectric matrix comprising the second density includes increased bond lengths of oxygen-silicon bonds and/or oxygen-semiconductor bonds, increased bond angles of oxygen-silicon bonds and/or oxygen-semiconductor material bonds, and pores in the dielectric matrix are sealed compared to the dielectric matrix comprising the first density.

Abstract translation: 公开了扩散阻挡层和形成扩散浴的方法。 在层间电介质（ILD）中形成沟槽结构。 ILD包括具有第一密度的介电矩阵。 掺杂剂材料层形成在沟槽结构中，其中掺杂剂材料层包含稀土元素中的至少一种的原子。 对ILD和沟槽结构进行退火以在ILD的一个或多个区域中形成包含第二密度的介质矩阵，其上形成有大于第一密度的掺杂剂材料层。 在退火之后，包括第二密度的介电矩阵包括增加的氧 - 硅键和/或氧 - 半键键的键长度，增加的氧 - 硅键和/或氧 - 半导体材料键的键角以及介电矩阵中的孔 与包含第一密度的介电矩阵相比是密封的。

公开(公告)号：US20160133513A1

公开(公告)日：2016-05-12

申请号：US14920867

申请日：2015-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ganesh HEGDE ,  Mark RODDER ,  Rwik SENGUPTA ,  Chris BOWEN

IPC: H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L2221/1089

Abstract: A method is disclosed to form a metal-oxysilicate diffusion barrier for a damascene metallization. A trench is formed in an Inter Layer Dielectric (ILD) material. An oxysilicate formation-enhancement layer comprising silicon, carbon, oxygen, a constituent component of the ILD, or a combination thereof, is formed in the trench. A barrier seed layer is formed on the oxysilicate formation-enhancement layer comprising an elemental metal selected from a first group of elemental metals in combination with an elemental metal selected from a second group of elemental metals. An elemental metal in the second group is immiscible in copper or an alloy thereof, has a diffusion constant greater than a self-diffusion of copper or an alloy thereof; does not reducing silicon-oxygen bonds during oxysilicate formation; and promotes adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer. The structure is then annealed to form a metal-oxysilicate diffusion barrier.

Abstract translation: 公开了一种用于形成金属 - 氧硅酸盐扩散屏障用于大马士革金属化的方法。 在层间电介质（ILD）材料中形成沟槽。 在沟槽中形成包含硅，碳，氧，ILD的组成成分或其组合的氧硅酸盐形成增强层。 在氧硅酸盐形成增强层上形成阻挡种子层，其包含选自第一组元素金属的元素金属和选自第二组元素金属的元素金属。 第二组中的元素金属在铜或其合金中是不混溶的，其扩散常数大于铜或其合金的自扩散; 在氧硅酸盐形成过程中不会降低硅 - 氧键; 并且促进铜或铜合金与金属 - 氧硅酸盐屏障扩散层的粘附。 然后将该结构退火以形成金属 - 氧硅酸盐扩散阻挡层。