An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis; (b) the channel length is less than 10 nm long; (c) the source is doped with a first polarity and has a first conduction band; (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band. Other embodiments are described herein.