Invention Application
- Patent Title: SELECTIVELY FORMING A PROTECTIVE CONDUCTIVE CAP ON A METAL GATE ELECTRODE
- Patent Title (中): 选择在金属门电极上形成保护性导电帽
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Application No.: US14536167Application Date: 2014-11-07
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Publication No.: US20160133721A1Publication Date: 2016-05-12
- Inventor: Xiuyu Cai , Jiajun Mao , Xusheng Wu , Min-hwa Chi
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3205 ; H01L21/321 ; H01L21/28 ; H01L21/285
Abstract:
A replacement gate structure that includes a conductive metal gate electrode is formed in a gate cavity, wherein the gate cavity is formed in a dielectric material formed above an active region of a semiconductor device. An upper surface of the conductive metal gate electrode and an upper surface of the dielectric material are planarized during a common planarization process, and a protective conductive cap is selectively formed on and in direct physical contact with the planarized upper surface of the conductive metal gate electrode. A contact structure is formed in a dielectric insulating layer formed above the replacement gate structure, the contact structure directly contacting the protective conductive cap.
Public/Granted literature
- US09379209B2 Selectively forming a protective conductive cap on a metal gate electrode Public/Granted day:2016-06-28
Information query
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