Invention Application
- Patent Title: SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US14948228Application Date: 2015-11-20
-
Publication No.: US20160148888A1Publication Date: 2016-05-26
- Inventor: Seung-Kwan RYU , Jongbo SHIM , Eunchul AHN , Taeje CHO
- Applicant: Seung-Kwan RYU , Jongbo SHIM , Eunchul AHN , Taeje CHO
- Priority: KR10-2014-0162642 20141120; KR10-2014-0178256 20141211
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48

Abstract:
A semiconductor device may include a semiconductor substrate, a conductive pad on the semiconductor substrate, a passivation layer overlying the semiconductor substrate and exposing the conductive pad, and a bump structure. The bump structure may include a first bump structure on the conductive pad and a second bump structure on the passivation layer. The first bump structure may include a base bump layer, a first pillar bump layer, and a first solder bump layer that are sequentially stacked on the conductive pad. The second bump structure may include a second pillar bump layer and a second solder bump layer that are sequentially stacked on the passivation layer.
Information query
IPC分类: