Invention Application
US20160148976A1 Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory Application
审中-公开
MSM堆叠中Si的同时碳氮掺杂作为非易失性存储器应用的选择器件
- Patent Title: Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory Application
- Patent Title (中): MSM堆叠中Si的同时碳氮掺杂作为非易失性存储器应用的选择器件
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Application No.: US14554388Application Date: 2014-11-26
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Publication No.: US20160148976A1Publication Date: 2016-05-26
- Inventor: Ashish Bodke , Mark Clark , Kevin Kashefi , Prashant B. Phatak , Dipankar Pramanik
- Applicant: Intermolecular, Inc.
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00

Abstract:
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on a silicon semiconductor layer doped with both carbon and nitrogen. The metal layer of the selector element can include conductive materials such as carbon, tungsten, titanium nitride, or combinations thereof.
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