公开(公告)号：US20170104031A1

公开(公告)日：2017-04-13

申请号：US15287091

申请日：2016-10-06

Applicant: Intermolecular, Inc.

Inventor： Mark Clark ,  Prashant Phatak ,  Charlene Chen ,  Ashish Bodke ,  Salil Mujumdar ,  Federico Nardi ,  Satbir Kahlon ,  Sergey V. Barabash ,  Feihu Wang

IPC: H01L27/24 ,  G11C11/16 ,  G11C13/00 ,  H01L45/00 ,  H01L27/22

CPC classification number: G11C11/1659 ,  G11C13/003 ,  G11C2213/53 ,  G11C2213/72 ,  G11C2213/76 ,  H01L27/224 ,  H01L27/2409 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/144

Abstract: Provided are selector elements with active components comprising insulating matrices and mobile ions disposed within these insulating matrices. Also provided are methods of operating such selector elements. The insulating matrices and mobile ions may be formed from different combinations of materials. For example, the insulating matrix may comprise amorphous silicon or silicon oxide, while mobile ions may be silver ions. In another example, the active component comprises copper and germanium, selenium, or tellerium, e.g., Se61Cu39, Se67Cu33, or Se56Cu44. The active component may be a multilayered structure with a variable composition throughout the structure. For example, the concentration of mobile ions may be higher in a center of the structure, away from the electrode interfaces. In some embodiments, outer layers may be formed from Ge33Se24Cu47, while the middle layer may be formed from Ge47Se29Cu24.

公开(公告)号：US20160111471A1

公开(公告)日：2016-04-21

申请号：US14516273

申请日：2014-10-16

Applicant: Intermolecular, Inc.

Inventor： Monica Mathur ,  Mark Clark

IPC: H01L27/24 ,  H01L29/45 ,  H01L29/24 ,  H01L29/267

CPC classification number: H01L27/2409 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/224 ,  H01L27/2463 ,  H01L45/16

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择器元件的半导体层可以包括碳化硅/氮化硅纳米层压体叠层。 选择元件的半导体层可以包括硅氮化硅/氮化硅纳米层叠体。 MSM的导电材料可以包括钨，氮化钛，碳或它们的组合。

公开(公告)号：US09368721B1

公开(公告)日：2016-06-14

申请号：US14553443

申请日：2014-11-25

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak

IPC: H01L45/00

CPC classification number: H01L45/1286 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/149

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少未选择器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 可以使用包括类金刚石碳（DLC）的结构来围绕MSM堆叠的半导体层。 DLC结构的高热导率可用于在较高的电流流过选择器元件时从选择器装置移除热量。 这可能导致改进的可靠性和耐久性。

公开(公告)号：US09337238B1

公开(公告)日：2016-05-10

申请号：US14524801

申请日：2014-10-27

Applicant: Intermolecular, Inc.

Inventor： Kevin Kashefi ,  Ashish Bodke ,  Mark Clark ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L27/24 ,  H01L33/50 ,  H01L33/32 ,  H01L33/30 ,  H01L33/28 ,  H01L33/40

CPC classification number: H01L27/2409 ,  H01L27/15 ,  H01L33/285 ,  H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01L33/502 ,  H01L45/08

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择元件的半导体层可以包括光致发光或电致发光材料。 MSM的导电材料可以包括钨，氮化钛，碳或其组合。

公开(公告)号：US20160118440A1

公开(公告)日：2016-04-28

申请号：US14524801

申请日：2014-10-27

Applicant: Intermolecular, Inc.

Inventor： Kevin Kashefi ,  Ashish Bodke ,  Mark Clark ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L27/24 ,  H01L33/40 ,  H01L33/32 ,  H01L33/50 ,  H01L33/28 ,  H01L33/30

CPC classification number: H01L27/2409 ,  H01L27/15 ,  H01L33/285 ,  H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01L33/502 ,  H01L45/08

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择元件的半导体层可以包括光致发光或电致发光材料。 MSM的导电材料可以包括钨，氮化钛，碳或其组合。

公开(公告)号：US09455393B1

公开(公告)日：2016-09-27

申请号：US14981163

申请日：2015-12-28

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Frank Greer ,  Mark Clark

IPC: H01L29/06 ,  H01L29/08 ,  H01L39/24 ,  H01L39/02

CPC classification number: H01L39/2493 ,  H01L27/18

Abstract: Provided are superconducting circuits and method of forming thereof. A superconducting circuit may include a low loss dielectric (LLD) layer formed from one or both of polycrystalline silicon or polycrystalline germanium. The LLD layer may be formed at a low temperature (e.g., less than about 525° C.) using chemical vapor deposition (CVD). Addition of germanium may help to lower the deposition temperature and improve crystallinity of the resulting layer. The LLD layer is formed without adding silicides at the interface of the LLD layer and metal electrode. In some embodiments, an initial layer (e.g., a seed layer or a protective layer) may be formed on a metal electrode prior to forming the LLD layer. For example, the initial layer may include one of zinc sulfide, polycrystalline germanium, or polycrystalline silicon. The initial layer may be deposited at a low pressure (e.g., less than 10 Torr) to ensure higher levels of crystallinity.

Abstract translation: 提供超导电路及其形成方法。 超导电路可以包括由多晶硅或多晶锗中的一个或两者形成的低损耗电介质（LLD）层。 可以使用化学气相沉积（CVD）在低温（例如，小于约525℃）下形成LLD层。 添加锗可能有助于降低沉积温度并改善所得层的结晶度。 在LLD层和金属电极的界面处不添加硅化物形成LLD层。 在一些实施例中，可以在形成LLD层之前在金属电极上形成初始层（例如种子层或保护层）。 例如，初始层可以包括硫化锌，多晶锗或多晶硅中的一种。 初始层可以以低压（例如，小于10托）沉积以确保更高水平的结晶度。

公开(公告)号：US09443906B2

公开(公告)日：2016-09-13

申请号：US14136365

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Monica Sawkar Mathur ,  Venkat Ananthan ,  Mark Clark ,  Prashant B. Phatak

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2418 ,  H01L27/2463 ,  H01L45/00 ,  H01L45/08

Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.

Abstract translation: 公开了可适用于非易失性存储器件应用的控制元件。 控制元件可以在低电压下具有低漏电流，以减少非选定器件的潜行电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 控制元件可以基于单个电介质层或多层电介质叠层。

公开(公告)号：US20150179933A1

公开(公告)日：2015-06-25

申请号：US14136365

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Monica Sawkar Mathur ,  Venkat Ananthan ,  Mark Clark ,  Prashant B. Phatak

IPC: H01L45/00

CPC classification number: H01L27/2418 ,  H01L27/2463 ,  H01L45/00 ,  H01L45/08

Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.

Abstract translation: 公开了可适用于非易失性存储器件应用的控制元件。 控制元件可以在低电压下具有低漏电流，以减少非选定器件的潜行电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 控制元件可以基于单个电介质层或多层电介质叠层。

公开(公告)号：US09680092B2

公开(公告)日：2017-06-13

申请号：US15225980

申请日：2016-08-02

Applicant: Intermolecular, Inc.

Inventor： Federico Nardi ,  Mark Clark

IPC: H01L45/00 ,  H01L27/24 ,  H01L29/861 ,  H01L27/108 ,  H01L27/11 ,  H01L29/45 ,  H01L23/528

CPC classification number: H01L45/122 ,  H01L23/528 ,  H01L27/10805 ,  H01L27/11 ,  H01L27/2409 ,  H01L27/2418 ,  H01L29/45 ,  H01L29/861 ,  H01L45/00 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/143

Abstract: Provided are hybrid electrodes comprising base structures and plugs disposed within the base structures. Also provided are selector elements comprising such hybrid electrodes and memory arrays with selector elements used for addressing individual memory cells. Specifically, the base structure and plug of a hybrid electrode have different compositions but both interface the same dielectric of the selector element. This design allows anti-parallel diode and other configurations with a very few components. The base structure and plug may have different dopants, different stoichiometry of the same alloy, or formed from completely different materials. The interfacing surface portions of a hybrid electrode may have different sizes. A combination of these surface portions (e.g., areas, surface conditions) and materials (e.g., compositions) can be used for tuning operating characteristics of selector elements using such hybrid electrodes.

公开(公告)号：US20170062524A1

公开(公告)日：2017-03-02

申请号：US15225980

申请日：2016-08-02

Applicant: Intermolecular, Inc.

Inventor： Federico Nardi ,  Mark Clark

IPC: H01L27/24 ,  H01L23/528 ,  H01L27/11 ,  H01L29/45 ,  H01L29/861 ,  H01L27/108

CPC classification number: H01L45/122 ,  H01L23/528 ,  H01L27/10805 ,  H01L27/11 ,  H01L27/2409 ,  H01L27/2418 ,  H01L29/45 ,  H01L29/861 ,  H01L45/00 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/143

Abstract: Provided are hybrid electrodes comprising base structures and plugs disposed within the base structures. Also provided are selector elements comprising such hybrid electrodes and memory arrays with selector elements used for addressing individual memory cells. Specifically, the base structure and plug of a hybrid electrode have different compositions but both interface the same dielectric of the selector element. This design allows anti-parallel diode and other configurations with a very few components. The base structure and plug may have different dopants, different stoichiometry of the same alloy, or formed from completely different materials. The interfacing surface portions of a hybrid electrode may have different sizes. A combination of these surface portions (e.g., areas, surface conditions) and materials (e.g., compositions) can be used for tuning operating characteristics of selector elements using such hybrid electrodes.

Abstract translation: 提供了包括设置在基部结构内的基部结构和插塞的混合电极。 还提供了包括这种混合电极的选择器元件和具有用于寻址各个存储器单元的选择器元件的存储器阵列。 具体地说，混合电极的基底结构和插头具有不同的组成，但是两者都与选择器元件的相同电介质接触。 这种设计允许反并联二极管和其他配置的组件很少。 基础结构和塞子可以具有不同的掺杂剂，相同合金的不同化学计量或由完全不同的材料形成。 混合电极的接合表面部分可以具有不同的尺寸。 可以使用这些表面部分（例如，区域，表面条件）和材料（例如组合物）的组合来调整使用这种混合电极的选择器元件的操作特性。