发明申请
US20160155881A1 THIN FILM III-V OPTOELECTRONIC DEVICE OPTIMIZED FOR NON-SOLAR ILLUMINATION SOURCES
审中-公开
用于非太阳照明源优化的薄膜III-V光电器件
- 专利标题： THIN FILM III-V OPTOELECTRONIC DEVICE OPTIMIZED FOR NON-SOLAR ILLUMINATION SOURCES
- 专利标题（中）： 用于非太阳照明源优化的薄膜III-V光电器件
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申请号： US15006003申请日： 2016-01-25
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公开(公告)号： US20160155881A1公开(公告)日： 2016-06-02
- 发明人: Brendan M. KAYES , Gregg S. HIGASHI , Sam COWLEY , Christopher FRANCE , Ling ZHANG , Gang HE
- 申请人： Alta Devices, Inc.
- 主分类号： H01L31/109
- IPC分类号： H01L31/109 ; H01L31/18 ; H01L31/0232
摘要：
An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter layer, wherein the base and/or emitter layers comprise materials whose quantum efficiency spectrum is well-matched to a spectrum of incident light, wherein the incident light is from a light source other than the sun; and wherein the device is a flexible single-crystal device. The method for forming an optoelectronic device optimized for the conversion of light from non-solar illumination sources into electricity, comprises depositing a buffer layer on a wafer; depositing a release layer above the buffer layer; depositing a p-n structure above the release layer; and lifting off the p-n structure from the wafer.
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