公开(公告)号：US20150340520A1

公开(公告)日：2015-11-26

申请号：US14452393

申请日：2014-08-05

申请人： Alta Devices, Inc.

发明人： I-Kang DING ,  Brendan M. KAYES ,  Rose TWIST ,  Sylvia SPRYUTTE ,  Feng LIU ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Gang HE

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/184 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/50 ,  Y02E10/52 ,  Y02P70/521

摘要： A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.

摘要翻译： 公开了一种用于在光电子器件中提供纹理化层的方法。 该方法包括在第一层上沉积模板层。 模板层在厚度或组成或两者中具有显着的不均匀性，包括形成一个或多个岛以提供岛层的至少一个纹理表面的可能性。 该方法还包括将模板层和第一层暴露于蚀刻工艺以产生或改变至少一个纹理表面。 改变的至少一个有纹理的表面可操作以引起光的散射。

公开(公告)号：US20150243815A1

公开(公告)日：2015-08-27

申请号：US14706704

申请日：2015-05-07

申请人： Alta Devices, Inc.

发明人： Gang HE ,  Isik C. KIZILYALLI ,  Melissa J. ARCHER ,  Harry A. ATWATER ,  Thomas J. GMITTER ,  Andreas G. HEGEDUS ,  Gregg S. HIGASHI

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0304

摘要： Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

摘要翻译： 提供了与常规太阳能电池相比，用于将电磁辐射如太阳能转换成电能的方法和装置，其效率提高。 光伏（PV）装置通常包括窗口层; 设置在窗口层下方的吸收层，使得当光子穿过窗口层并被吸收层吸收时，产生电子; 以及多个用于连接到吸收层的外部连接的触点，使得用于外部连接的所有触点都设置在吸收层下方，并且不阻挡任何光子通过窗口层到达吸收层。 定位PV装置背面的所有触点避免了由常规太阳能电池中常见的前侧触点造成的太阳阴影。 因此，与传统的太阳能电池相比，具有背面接触的本文描述的PV器件可以提高效率。

公开(公告)号：US20180102443A1

公开(公告)日：2018-04-12

申请号：US15837533

申请日：2017-12-11

申请人： Alta Devices, Inc.

发明人： Brendan M. Kayes ,  Melissa J. Archer ,  Thomas J. Gmitter ,  Gang HE

IPC分类号： H01L31/0236 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/22

CPC分类号： H01L31/02363 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1892 ,  H01L33/22 ,  H01L33/405 ,  Y02E10/544

摘要： An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.

公开(公告)号：US20160049334A1

公开(公告)日：2016-02-18

申请号：US14861821

申请日：2015-09-22

申请人： ALTA DEVICES, Inc.

发明人： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Andreas HEGEDUS

IPC分类号： H01L21/78 ,  H01L21/306 ,  H01L31/18 ,  H01L21/683

CPC分类号： H01L21/7813 ,  H01L21/30612 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L31/184 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/6839

摘要： Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

摘要翻译： 本发明的实施例一般涉及通过外延剥离（ELO）工艺制造外延薄膜和器件的装置和方法。 在一个实施例中，提供了一种在ELO工艺期间形成薄膜器件的方法，其包括将多个衬底耦合到细长支撑带，其中每个衬底包含设置在设置在晶片上方的牺牲层上的外延膜， 在移动细长的支撑带的同时蚀刻过程中的蚀刻剂，以及蚀刻牺牲层并在移动细长支撑带的同时从晶片剥离外延膜。 实施例还包括几种用于形成外延薄膜和器件的连续型和间歇式器件的装置，包括用于从其上生长外延膜的晶片去除支撑带和外延膜的装置。

公开(公告)号：US20130153013A1

公开(公告)日：2013-06-20

申请号：US13772043

申请日：2013-02-20

申请人： Alta Devices, Inc.

发明人： Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Gregg HIGASHI

IPC分类号： H01L31/0304

CPC分类号： H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 本发明的一个实施例提供一种光伏（PV）装置。 PV器件包括由化合物半导体制成的吸收层; 以及位于比该吸收层更靠近器件第一侧的发射极层。 PV器件包括形成在发射极层和吸收层之间的p-n结，p-n结响应于器件在器件的第二侧被曝光而在器件中产生电压。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

公开(公告)号：US20190288134A1

公开(公告)日：2019-09-19

申请号：US16427142

申请日：2019-05-30

申请人： ALTA DEVICES, INC.

发明人： Linlin YANG ,  Liguang LAN ,  Chris FRANCE ,  Gang HE ,  Erhong LI ,  Jose CORBACHO

IPC分类号： H01L31/0224 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/05 ,  H01L31/0445 ,  H01L31/18 ,  H01L31/048

摘要： System and method of providing a photovoltaic (PV) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film PV layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (PV) surface. The cushion layer is made of a nonconductive material and has a plurality of vias filled with a conductive material to provide electrical continuity between the bus bar and the PV layer. The cushion layer may be made of a flexible material preferably with rigidity that matches the substrate. Thus, the cushion layer can effectively protect the PV layer from physical damage due to tactile contact with the front metal contact.

公开(公告)号：US20150279741A1

公开(公告)日：2015-10-01

申请号：US14723223

申请日：2015-05-27

申请人： ALTA DEVICES, Inc.

发明人： Melissa ARCHER ,  Harry ATWATER ,  Thomas GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI ,  Stewart SONNENFELDT

IPC分类号： H01L21/78 ,  H01L21/306 ,  H01L21/02 ,  H01L21/683

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

公开(公告)号：US20140158307A1

公开(公告)日：2014-06-12

申请号：US14183349

申请日：2014-02-18

申请人： ALTA DEVICES, INC,

发明人： Brian BURROWS ,  Brian BROWN ,  Thomas GMITTER ,  Gang HE

IPC分类号： H01L31/18 ,  H01L33/00

CPC分类号： H01L31/18 ,  B32B43/006 ,  B32B2457/00 ,  H01L21/67086 ,  H01L21/67303 ,  H01L21/67346 ,  H01L21/67757 ,  H01L21/7813 ,  H01L31/1892 ,  H01L33/005 ,  Y02E10/50 ,  Y10T29/49824 ,  Y10T156/1111 ,  Y10T156/1168 ,  Y10T156/1978

摘要： An apparatus, system and method for performing ELO are disclosed. Device assemblies are contemporaneously etched in a stacked arrangement. Each device assembly may be placed in a respective tray, where the trays are overlapped and spaced apart from one another. In this manner, more device assemblies can be etched per unit area compared to conventional systems. Further, by stacking device assemblies during etching, the yield can be improved and/or the cost of the etch tank and associated hardware can be reduced.

摘要翻译： 公开了一种用于执行ELO的装置，系统和方法。 器件组件以堆叠的方式同时蚀刻。 每个设备组件可以放置在相应的托盘中，其中托盘重叠并且彼此间隔开。 以这种方式，与常规系统相比，每单位面积可以蚀刻更多的器件组件。 此外，通过在蚀刻期间堆叠器件组件，可以提高成品率和/或可以降低蚀刻槽和相关硬件的成本。

公开(公告)号：US20190386170A1

公开(公告)日：2019-12-19

申请号：US16011516

申请日：2018-06-18

申请人： ALTA DEVICES, INC.

发明人： Nikhil JAIN ,  Brendan M. KAYES ,  Gang HE

IPC分类号： H01L31/18 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/0232 ,  H01L31/0216 ,  H01L33/00 ,  H01L33/04

摘要： A multi junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.

公开(公告)号：US20190259888A1

公开(公告)日：2019-08-22

申请号：US16404602

申请日：2019-05-06

申请人： ALTA DEVICES, INC.

发明人： Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Gregg HIGASHI

IPC分类号： H01L31/0304 ,  H01L31/068 ,  H01L31/065 ,  H01L31/0735 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/0693

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.