发明申请
- 专利标题： ARTIFICIAL CRYSTAL GROWTH METHOD
- 专利标题（中）： 人造水晶生长方法
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申请号： US15046726申请日： 2016-02-18
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公开(公告)号： US20160160389A1公开(公告)日： 2016-06-09
- 发明人: MASATOSHI NISHIMOTO , Yu Shirai , Sugao Yamaguchi , Takumi Shitara
- 申请人： Murata Manufacturing Co., Ltd.
- 优先权： JP2013-178159 20130829
- 主分类号： C30B33/06
- IPC分类号： C30B33/06 ; C30B7/10
摘要：
An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the pressure is being applied.
公开/授权文献
- US09976232B2 Artificial quartz crystal growth method 公开/授权日：2018-05-22
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