公开(公告)号：US20160160389A1

公开(公告)日：2016-06-09

申请号：US15046726

申请日：2016-02-18

申请人： Murata Manufacturing Co., Ltd.

发明人： MASATOSHI NISHIMOTO ,  Yu Shirai ,  Sugao Yamaguchi ,  Takumi Shitara

IPC分类号： C30B33/06 ,  C30B7/10

CPC分类号： C30B33/06 ,  C30B7/10 ,  C30B29/18

摘要： An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the pressure is being applied.

摘要翻译： 一种人造晶体生长方法，包括施加使至少两个基本上呈矩形的平行六面体形状的晶体基板的压力在X轴方向上彼此抵接，所述晶体基板的晶轴方向彼此对准，并且使得 至少两个晶体衬底，以在施加压力的状态下生长人造晶体。

公开(公告)号：US09976232B2

公开(公告)日：2018-05-22

申请号：US15046726

申请日：2016-02-18

申请人： Murata Manufacturing Co., Ltd.

发明人： Masatoshi Nishimoto ,  Yu Shirai ,  Sugao Yamaguchi ,  Takumi Shitara

IPC分类号： C30B33/06 ,  C30B29/18 ,  C30B7/10

CPC分类号： C30B33/06 ,  C30B7/10 ,  C30B29/18

摘要： An artificial quartz crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped quartz crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the quartz crystal substrates aligned with each other, and causing the at least two quartz crystal substrates to grow an artificial quartz crystal in a state where the pressure is being applied.