发明申请
US20160163879A1 SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS PLANES, RELATED DESIGN STRUCTURE AND METHOD OF FABRICATION
有权
半导体器件，包括嵌入式晶体反向栅偏移平面，相关设计结构和制造方法
- 专利标题： SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS PLANES, RELATED DESIGN STRUCTURE AND METHOD OF FABRICATION
- 专利标题（中）： 半导体器件，包括嵌入式晶体反向栅偏移平面，相关设计结构和制造方法
-
申请号： US15009906申请日： 2016-01-29
-
公开(公告)号： US20160163879A1公开(公告)日： 2016-06-09
- 发明人: Thomas N. Adam , Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Raghavasimhan Sreenivasan
- 申请人： GLOBALFOUNDRIES Inc.
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L27/12
摘要：
A semiconductor device is disclosed. The semiconductor device can include a first dielectric layer disposed on a substrate; a set of bias lines disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer and between the set of bias lines, wherein a thickness of the second dielectric layer is less than a thickness of the first dielectric layer; a patterned semiconductor layer disposed on portions of the second dielectric layer; and a set of devices disposed on the patterned semiconductor layer above the set of bias lines.
公开/授权文献
信息查询
IPC分类:
