Invention Application
- Patent Title: Method of Manufacturing Semiconductor Devices using Light Ion Implantation and Semiconductor Device
- Patent Title (中): 使用光离子注入和半导体器件制造半导体器件的方法
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Application No.: US14952337Application Date: 2015-11-25
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Publication No.: US20160172438A1Publication Date: 2016-06-16
- Inventor: Moriz Jelinek , Johannes Georg Laven , Hans-Joachim Schulze , Werner Schustereder
- Applicant: Infineon Technologies AG
- Priority: DE102014117538 20141128
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/266 ; H01L29/78 ; H01L29/04 ; H01L29/10 ; H01L29/66 ; H01L21/265 ; H01L21/66
Abstract:
A first doped region is formed in a single crystalline semiconductor substrate. Light ions are implanted through a process surface into the semiconductor substrate to generate crystal lattice vacancies between the first doped region and the process surface, wherein a main beam axis of an implant beam used for implanting the light ions deviates by at most 1.5 degree from a main crystal direction along which channeling of the light ions occurs. A second doped region with a conductivity type opposite to the first doped region is formed based on the crystal lattice vacancies and hydrogen atoms.
Public/Granted literature
- US09634086B2 Method of manufacturing semiconductor devices using light ion implantation and semiconductor device Public/Granted day:2017-04-25
Information query
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