发明申请
US20160189974A1 Substrate processing method, non-transitory storage medium and heating apparatus
有权
基板加工方法，非暂时性存储介质和加热装置
- 专利标题： Substrate processing method, non-transitory storage medium and heating apparatus
- 专利标题（中）： 基板加工方法，非暂时性存储介质和加热装置
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申请号： US14757850申请日： 2015-12-24
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公开(公告)号： US20160189974A1公开(公告)日： 2016-06-30
- 发明人: Takahiro Shiozawa , Kenichi Ueda
- 申请人： Tokyo Electron Limited
- 优先权： JP2014-265051 20141226
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/67 ; H05B3/00 ; H01L21/027
摘要：
A substrate processing method includes a coating step that applies a coating liquid to a substrate having a front surface on which a pattern is formed, thereby forming a coating film on the substrate, a film removing step that heats the substrate to gasify components of the coating film thereby to reduce a thickness of the film, and a film curing step that is performed after or simultaneously with the film removing step and that heats the substrate to cure the coating film through crosslinking reaction. The film removing step is performed under conditions ensuring that an average thickness of the cured coating film is not greater than 80% of an average thickness of the coating film before being subjected to the film removing step.
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