Described is an apparatus for a voltage controlled nano-magnetic random number generator. The apparatus comprises: a free ferromagnetic layer; a fixed ferromagnetic layer positioned in a non-collinear direction relative to the free ferromagnet layer; and a first terminal coupled to the free ferromagnetic layer, the first terminal to provide a bias voltage to the free ferromagnetic layer. Described is also an integrated circuit comprising: a random number generator including a magnetic tunnel junction (MTJ) device with non-collinearly positioned free and fixed ferromagnetic layers; and a circuit to provide an adjustable bias voltage to the free ferromagnetic layer, the circuit to control variance of current generated by the random number generator.