公开(公告)号：US20160202954A1

公开(公告)日：2016-07-14

申请号：US14912895

申请日：2013-09-27

Applicant: INTEL CORPORATION

Inventor： SASIKANTH MANIPATRUNI ,  DMITRI NIKONOV ,  IAN YOUNG

IPC: G06F7/58 ,  H01L43/08 ,  H01L43/10 ,  G06F1/16

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G06F1/1613 ,  G06F7/588 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/10

Abstract: Described is an apparatus for a voltage controlled nano-magnetic random number generator. The apparatus comprises: a free ferromagnetic layer; a fixed ferromagnetic layer positioned in a non-collinear direction relative to the free ferromagnet layer; and a first terminal coupled to the free ferromagnetic layer, the first terminal to provide a bias voltage to the free ferromagnetic layer. Described is also an integrated circuit comprising: a random number generator including a magnetic tunnel junction (MTJ) device with non-collinearly positioned free and fixed ferromagnetic layers; and a circuit to provide an adjustable bias voltage to the free ferromagnetic layer, the circuit to control variance of current generated by the random number generator.

Abstract translation: 描述了一种用于电压控制的纳米磁性随机数发生器的装置。 该装置包括：自由铁磁层; 相对于游离铁磁体层位于非共线方向的固定铁磁层; 以及耦合到所述自由铁磁层的第一端子，所述第一端子为所述自由铁磁层提供偏置电压。 还描述了一种集成电路，包括：随机数发生器，其包括具有非共线定位的自由和固定的铁磁层的磁性隧道结（MTJ）装置; 以及向自由铁磁层提供可调偏置电压的电路，该电路控制由随机数发生器产生的电流的变化。

公开(公告)号：US20160042778A1

公开(公告)日：2016-02-11

申请号：US14780489

申请日：2013-06-21

Applicant: INTEL CORPORATION

Inventor： SASIKANTH MANIPATRUNI ,  DMITRI NIKONOV ,  IAN YOUNG

IPC: G11C11/16 ,  H01L43/06 ,  H01L27/22 ,  H01L43/12

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/226 ,  H01L27/228 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12

Abstract: Described is an apparatus 1T-1 Magnetic Tunnel Junction (MTJ) Spin Hall Magnetic Random Access Memory (MRAM) bit-cell and array, and method of forming such. The apparatus comprises: a select line; an interconnect with Spin Hall Effect (SHE) material, the interconnect coupled to a write bit line; a transistor coupled to the select line and the interconnect, the transistor controllable by a word line; and a MTJ device having a free magnetic layer coupled to the interconnect.

Abstract translation: 描述了一种装置1T-1磁隧道结（MTJ）旋转磁体随机存取存储器（MRAM）位单元和阵列及其形成方法。 该装置包括：选择线; 与旋转霍尔效应（SHE）材料的互连，耦合到写位线的互连; 耦合到选择线和互连的晶体管，晶体管可由字线控制; 以及具有耦合到互连的自由磁性层的MTJ装置。