Invention Application
US20160203960A1 SPUTTERING TARGETS AND DEVICES INCLUDING Mo, Nb, and Ta, AND METHODS
审中-公开
包括Mo,Nb和Ta的溅射靶和器件及方法
- Patent Title: SPUTTERING TARGETS AND DEVICES INCLUDING Mo, Nb, and Ta, AND METHODS
- Patent Title (中): 包括Mo,Nb和Ta的溅射靶和器件及方法
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Application No.: US14992266Application Date: 2016-01-11
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Publication No.: US20160203960A1Publication Date: 2016-07-14
- Inventor: Shuwei Sun , Gary Alan Rozak , Qi Zhang , Barbara Cox , YEN-TE Lee
- Applicant: H.C. STARCK INC.
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/16 ; G06F3/041 ; C23C14/34

Abstract:
Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.
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