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    Multi-block sputtering target and associated methods and articles
    1.
    发明授权
    Multi-block sputtering target and associated methods and articles 有权

    公开(公告)号：US10727032B2

    公开(公告)日：2020-07-28

    申请号：US16238844

    申请日：2019-01-03

    申请人： H.C. Starck Inc.

    发明人： Gary Alan Rozak ,  Mark E. Gaydos

    IPC分类号： C23C14/34 ,  H01J37/34 ,  B22F1/00 ,  B22F3/15 ,  B22F3/24 ,  C22C27/04

    摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

    HIGH PURITY REFRACTORY METAL POWDERS AND THEIR USE IN SPUTTERING TARGETS WHICH MAY HAVE RANDOM TEXTURE
    4.
    发明申请
    HIGH PURITY REFRACTORY METAL POWDERS AND THEIR USE IN SPUTTERING TARGETS WHICH MAY HAVE RANDOM TEXTURE 有权
    高纯度金属粉末及其在可能具有随机纹理的溅射目标中的应用

    公开(公告)号：US20150292081A1

    公开(公告)日：2015-10-15

    申请号：US14681660

    申请日：2015-04-08

    申请人： H.C. Starck Inc.

    发明人： Patrick Hogan ,  Paul Aimone ,  Joseph Flanigan ,  Marcel Hagymasi ,  Helmut Haas

    IPC分类号： C23C14/34 ,  C23C14/14 ,  B22F3/15 ,  B22F9/16 ,  B22F1/00 ,  B22F3/02

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  B22F3/02 ,  B22F3/1208 ,  B22F3/15 ,  B22F2003/1014 ,  C22C1/045 ,  C22F1/18 ,  C23C14/14 ,  H01J37/3426

    摘要： A method for making a sputtering target including steps of encapsulating and hot isostatically pressing at least one mass of metal powder (e.g., tantalum), having a particle size ranging from about 10 to about 1000 μm, with at least about 10 percent by weight of particles having a particle size greater than about 150 μm (for example, about 29 to about 56 percent (e.g., about 35 to about 47 percent) by weight of the particles in the at least one mass of metal powder having a particle size that is larger than 150 microns, but below about 250 μm), for defining at least a portion of a sputtering target body, having an essentially theoretical random and substantially uniform crystallographic texture.

    摘要翻译： 一种用于制造溅射靶的方法，包括以下步骤：将至少一种具有约10至约1000μm的粒度的至少一种金属粉末（例如钽）与至少约10重量％的金属粉末 粒径大于约150μm的颗粒（例如，在至少一种质量的金属粉末中的颗粒的重量比例为约29至约56％（例如约35至约47％），其粒径为 大于150微米，但低于约250μm），用于限定溅射靶体的至少一部分，具有基本上理论上的随机和基本上均匀的晶体织构。

    MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS
    5.
    发明申请
    MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS 有权
    包含三元金属元素的包含目标

    公开(公告)号：US20140102880A1

    公开(公告)日：2014-04-17

    申请号：US13856617

    申请日：2013-04-04

    申请人： H.C. STARCK, INC.

    发明人： Gary Alan Rozak ,  Mark E. Gaydos ,  Patrick Alan Hogan ,  Shuwei Sun

    IPC分类号： C23C14/34

    CPC分类号： C23C14/185 ,  B22F2998/10 ,  C22C1/045 ,  C22C27/04 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/5873 ,  G06F3/041 ,  G06F2203/04103 ,  Y10T428/12743 ,  Y10T428/12826 ,  Y10T428/265 ,  Y10T428/31678 ,  B22F1/0003 ,  B22F3/15

    摘要： The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium.

    摘要翻译： 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤：将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 当溅射靶位于真空室（例如，使用磁场和/或电场）时，从溅射靶的表面去除原子。 沉积层优选是包含约50原子％或更多的钼，0.5至45原子％的选自铌和钒的第二金属元素的含钼合金; 和0.5〜45原子％的选自钽，铬，钒，铌和钛的第三金属元素。

    Refractory metal plates with uniform texture and methods of making the same
    8.
    发明申请
    Refractory metal plates with uniform texture and methods of making the same 审中-公开
    具有均匀质地的耐火金属板和制造相同的方法

    公开(公告)号：US20020112789A1

    公开(公告)日：2002-08-22

    申请号：US10079286

    申请日：2002-02-20

    申请人： H.C. Starck, Inc.

    发明人： Peter R. Jepson ,  Henning Uhlenhut ,  Prabhat Kumar

    IPC分类号： C22C027/02 ,  C23C014/34 ,  C21C001/00

    CPC分类号： C23C14/3414 ,  C22C27/02 ,  C22F1/18

    摘要： A method (10) of forming sputtering target (11) from ingots of tantalum or niobium of requisite purity by the process of cutting the ingot to short lengths (12) and pressure working (14, 22, 30, 34) the ingot along alternating essentially orthogonal work axes. Intermediate anneals (18, 26, 38) are applied as necessary to establish a uniform texture thickness-wise and area-wide throughout the target, including the center. The uniform texture is a substantially constant mix of grains with orientation null100null and null111null, thereby improving sputtering performance by providing a more predictable sputter rate to control film thickness.

    摘要翻译： 通过将铸锭切割成短的长度（12）和压力加工（14,22,30,34）的方法，通过将铸锭沿着交替的方式将铸锭切割成具有必需纯度的钽或铌锭的溅射靶（11）的方法（10） 基本上是正交的工作轴。 根据需要应用中间退火（18,26,38），以在整个目标（包括中心）建立均匀纹理厚度和面积。 均匀纹理是具有取向{100}和{111}的颗粒的基本恒定的混合物，从而通过提供更可预测的溅射速率来控制膜厚度来改善溅射性能。