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1.发明授权公开(公告)号：US09150955B2
公开(公告)日：2015-10-06
申请号：US13857508
申请日：2013-04-05
申请人： H.C. STARCK, INC.
IPC分类号： C23C14/06 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/58 , C23C14/54 , C23C14/35 , C03C17/40 , C22C1/04 , C22C27/04 , C23G1/10 , C23G1/20
CPC分类号： H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
摘要： The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of; placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target white the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably includes a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.1 to 45 atomic percent titanium; and 0.1 to 40 atomic percent of a third metal element that is tantalum or chromium.
摘要翻译： 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤： 将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 从溅射靶的表面去除原子时，溅射靶在真空室中（例如，使用磁场和/或电场）。 沉积层优选包括含钼的合金，包括约50原子％或更多的钼，0.1至45原子％的钛; 和0.1〜40原子％的作为钽或铬的第三金属元素。
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公开(公告)号：US09837253B2
公开(公告)日：2017-12-05
申请号：US14813732
申请日：2015-07-30
申请人： H.C. STARCK INC.
IPC分类号： B22F7/02 , H01J37/34 , C23C14/58 , C23C14/54 , C23C14/35 , C23C14/34 , G06F3/044 , C03C17/40 , C22C1/04 , C22C27/04 , C23G1/10 , C23G1/20 , C23C14/16 , C23C14/06 , C23C14/14
CPC分类号： H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
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公开(公告)号：US20140102880A1
公开(公告)日：2014-04-17
申请号：US13856617
申请日：2013-04-04
申请人： H.C. STARCK, INC.
IPC分类号： C23C14/34
CPC分类号： C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
摘要： The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium.
摘要翻译： 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤：将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 当溅射靶位于真空室（例如，使用磁场和/或电场）时，从溅射靶的表面去除原子。 沉积层优选是包含约50原子％或更多的钼，0.5至45原子％的选自铌和钒的第二金属元素的含钼合金; 和0.5〜45原子％的选自钽，铬，钒，铌和钛的第三金属元素。
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公开(公告)号：US20130224422A1
公开(公告)日：2013-08-29
申请号：US13857508
申请日：2013-04-05
申请人： H.C. STARCK, INC.
IPC分类号： C23C14/34
CPC分类号： H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
摘要： The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target white the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably includes a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.1 to 45 atomic percent titanium; and 0.1 to 40 atomic percent of a third metal element that is tantalum or chromium.
摘要翻译： 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤：将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 从溅射靶的表面去除原子时，溅射靶在真空室中（例如，使用磁场和/或电场）。 沉积层优选包括含钼的合金，包括约50原子％或更多的钼，0.1至45原子％的钛; 和0.1〜40原子％的作为钽或铬的第三金属元素。
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公开(公告)号：US20180187297A1
公开(公告)日：2018-07-05
申请号：US15908896
申请日：2018-03-01
申请人： H.C. STARCK, INC.
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
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6.发明申请公开(公告)号：US20160203960A1
公开(公告)日：2016-07-14
申请号：US14992266
申请日：2016-01-11
申请人： H.C. STARCK INC.
发明人： Shuwei Sun , Gary Alan Rozak , Qi Zhang , Barbara Cox , YEN-TE Lee
CPC分类号： H01J37/3429 , C22C21/00 , C22C27/04 , C23C14/083 , C23C14/14 , C23C14/165 , C23C14/3407 , G06F2203/04103
摘要： Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.
摘要翻译： 发现包括钼，铌和钽的溅射靶可用于电子器件的溅射膜。 具有约88至97重量％钼的溅射靶显示出改进的性能，特别是在蚀刻时，例如当同时蚀刻包括Mo，Nb和Ta的合金层以及金属层（例如，铝层）时。 这些目标在制造触摸屏设备中特别有用。
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公开(公告)号：US20210079512A1
公开(公告)日：2021-03-18
申请号：US17038325
申请日：2020-09-30
申请人： H.C. STARCK, INC.
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
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公开(公告)号：US20200013598A1
公开(公告)日：2020-01-09
申请号：US16512569
申请日：2019-07-16
申请人： H.C. STARCK INC.
IPC分类号： H01J37/34 , C23C14/34 , C23G1/20 , C23G1/10 , C22C27/04 , C22C1/04 , C03C17/40 , G06F3/044 , C23C14/35 , C23C14/54 , C23C14/58
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
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公开(公告)号：US10403483B2
公开(公告)日：2019-09-03
申请号：US15804365
申请日：2017-11-06
申请人： H.C. STARCK INC.
IPC分类号： C22C27/04 , H01J37/34 , C23C14/58 , C23C14/54 , C23C14/35 , C23C14/34 , G06F3/044 , C03C17/40 , C22C1/04 , C23G1/10 , C23G1/20 , C23C14/16 , C23C14/06 , C23C14/14
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
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公开(公告)号：US09945023B2
公开(公告)日：2018-04-17
申请号：US14669258
申请日：2015-03-26
申请人： H.C. STARCK, INC.
CPC分类号： C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
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