Invention Application
US20160203977A1 Semiconductor Arrangement Including Buried Anodic Oxide and Manufacturing Method
有权
包括埋地阳极氧化物的半导体布置及制造方法
- Patent Title: Semiconductor Arrangement Including Buried Anodic Oxide and Manufacturing Method
- Patent Title (中): 包括埋地阳极氧化物的半导体布置及制造方法
-
Application No.: US14594838Application Date: 2015-01-12
-
Publication No.: US20160203977A1Publication Date: 2016-07-14
- Inventor: Hans-Joachim Schulze , Ingo Muri , Iris Moder
- Applicant: Infineon Technologies AG
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/225 ; H01L21/74
Abstract:
In accordance with a method of manufacturing a semiconductor arrangement, a first trench is formed into a semiconductor body from a first side. An anodic oxide structure is formed at a bottom side of the first trench by immersing the semiconductor body in an electrolyte and applying an anodizing voltage between the semiconductor body and an electrode in contact with the electrolyte.
Public/Granted literature
- US09472395B2 Semiconductor arrangement including buried anodic oxide and manufacturing method Public/Granted day:2016-10-18
Information query
IPC分类:
