METHODS OF FORMING SEMICONDUCTOR DEVICE

Invention Application

US20160204030A1 METHODS OF FORMING SEMICONDUCTOR DEVICE 有权

Title translation: 形成半导体器件的方法

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Patent Title: METHODS OF FORMING SEMICONDUCTOR DEVICE
Patent Title (中): 形成半导体器件的方法
Application No.: US14955374

Application Date: 2015-12-01
Publication No.: US20160204030A1

Publication Date: 2016-07-14
Inventor: KeunHee BAI , Dohyoung KIM , Johnsoo KIM , Heungsik PARK , Doo-Young LEE , Sanghyun LEE
Applicant: Samsung Electronics Co., Ltd.
Priority: KR10-2015-0002882 20150108
Main IPC: H01L21/768
IPC: H01L21/768 ; H01L21/3065 ; H01L29/51 ; H01L21/28

Abstract:

A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.

Abstract(Chinese):

形成牺牲层以覆盖栅极结构。牺牲层被图案化以在牺牲层中形成第一开口。在第一开口中形成初步接触，并且选择性地去除牺牲层。形成绝缘层以覆盖栅极结构并露出初步接触。去除预接触以在绝缘层中形成第二开口，然后在第二开口中形成接触。

Public/Granted literature

US09704745B2 Methods of forming semiconductor device Public/Granted day:2017-07-11

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/768	...利用互连在器件中的分离元件间传输电流