Invention Application
US20160204130A1 Flat Panel Display Device with Oxide Thin Film Transistor and Method of Fabricating the Same
有权
具有氧化物薄膜晶体管的平板显示装置及其制造方法
- Patent Title: Flat Panel Display Device with Oxide Thin Film Transistor and Method of Fabricating the Same
- Patent Title (中): 具有氧化物薄膜晶体管的平板显示装置及其制造方法
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Application No.: US15078242Application Date: 2016-03-23
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Publication No.: US20160204130A1Publication Date: 2016-07-14
- Inventor: Ki Young JUNG , Ki Tae KIM , Chang Hoon HAN
- Applicant: LG Display Co., Ltd.
- Priority: KR10-2013-0060259 20130528
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/467 ; H01L29/66

Abstract:
A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.
Public/Granted literature
- US09570483B2 Flat panel display device with oxide thin film transistor and method of fabricating the same Public/Granted day:2017-02-14
Information query
IPC分类: