Abstract:
An organic light emitting display device includes a plurality of pixels each having a pixel driving circuit. Each of the pixels includes an organic light emitting diode and a driving TFT that controls driving of the organic light emitting diode and includes an active layer of low temperature poly-silicon, a gate node, a source node, and a drain node. The pixels include first to fifth switching TFTs electrically connected to the driving TFT and each including an active layer of an oxide semiconductor, a gate node, a source node, and a drain node. Further, the pixels include a storage capacitor connected between the gate node of the driving TFT and the source node of the fifth switching TFT and a coupling capacitor electrically connected in series to the storage capacitor and configured to cause capacitive coupling to supply a bootstrapped voltage to the gate node of the driving TFT.
Abstract:
According to an aspect of the present disclosure, an organic light emitting display device includes a plurality of pixels each including a pixel driving circuit. The plurality of pixels includes an organic light emitting diode and a driving TFT configured to control driving of the organic light emitting diode and including a gate node as a first node, a source node as a second node, and a drain node. Also, the plurality of pixels includes first to third switching TFTs electrically connected to the driving TFT and first and second storage capacitors configured to store a voltage to be applied to the driving TFT DT. Further, the plurality of pixels includes a coupling capacitor connected to a gate node of the third switching TFT so as to increase a voltage to be applied to the gate node of the driving TFT.
Abstract:
A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.
Abstract:
A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.