公开(公告)号：US20160204130A1

公开(公告)日：2016-07-14

申请号：US15078242

申请日：2016-03-23

Applicant: LG Display Co., Ltd.

Inventor： Ki Young JUNG ,  Ki Tae KIM ,  Chang Hoon HAN

IPC: H01L27/12 ,  H01L21/467 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78693 ,  H01L2029/42388

Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

Abstract translation: 公开了一种具有氧化物薄膜晶体管的平板显示装置，其包括：形成在基板上的缓冲膜; 形成在缓冲膜上的具有第一长度的宽度的氧化物半导体层; 栅极绝缘膜，其具有第二长度的宽度并形成在所述氧化物半导体层上; 栅电极，其具有第三长度的宽度并形成在栅极绝缘膜上; 形成在设置有栅电极的基板的整个表面上的层间绝缘膜; 源极和漏极，形成在层间绝缘膜上并连接到氧化物半导体层; 形成在设置有源极和漏极的衬底的整个表面上的钝化膜; 以及形成在钝化膜上并连接到漏电极的像素电极。 第一长度大于第二长度，第二长度大于第三长度。

公开(公告)号：US20140353660A1

公开(公告)日：2014-12-04

申请号：US14101160

申请日：2013-12-09

Applicant: LG Display Co., Ltd.

Inventor： Ki Young JUNG ,  Ki Tae KIM ,  Chang Hoon HAN

IPC: H01L27/12

CPC classification number: H01L27/127 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78693 ,  H01L2029/42388

Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

Abstract translation: 公开了一种具有氧化物薄膜晶体管的平板显示装置，其包括：形成在基板上的缓冲膜; 形成在缓冲膜上的具有第一长度的宽度的氧化物半导体层; 栅极绝缘膜，其具有第二长度的宽度并形成在所述氧化物半导体层上; 栅电极，其具有第三长度的宽度并形成在栅极绝缘膜上; 形成在设置有栅电极的基板的整个表面上的层间绝缘膜; 源极和漏极，形成在层间绝缘膜上并连接到氧化物半导体层; 形成在设置有源极和漏极的衬底的整个表面上的钝化膜; 以及形成在钝化膜上并连接到漏电极的像素电极。 第一长度大于第二长度，第二长度大于第三长度。