Invention Application
- Patent Title: SILICON NANO-TIP THIN FILM FOR FLASH MEMORY CELLS
- Patent Title (中): 用于闪存存储器的硅纳米薄膜
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Application No.: US14596487Application Date: 2015-01-14
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Publication No.: US20160204212A1Publication Date: 2016-07-14
- Inventor: Tsu-Hui Su , Chih-Ming Chen , Chia-Shiung Tsai , Chung-Yi Yu , Szu-Yu Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/66 ; H01L29/792
Abstract:
A quantum nano-tip (QNT) thin film, such as a silicon nano-tip (SiNT) thin film, for flash memory cells is provided to increase erase speed. The QNT thin film includes a first dielectric layer and a second dielectric layer arranged over the first dielectric layer. Further, the QNT thin film includes QNTs arranged over the first dielectric layer and extending into the second dielectric layer. A ratio of height to width of the QNTs is greater than 50 percent. A QNT based flash memory cell and a method for manufacture a SiNT based flash memory cell are also provided.
Public/Granted literature
- US09634105B2 Silicon nano-tip thin film for flash memory cells Public/Granted day:2017-04-25
Information query
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