发明申请
US20160204256A1 METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS STRUCTURES
审中-公开
在NMOS结构中形成分解增强应变的方法
- 专利标题： METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS STRUCTURES
- 专利标题（中）： 在NMOS结构中形成分解增强应变的方法
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申请号： US14912594申请日： 2013-09-26
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公开(公告)号： US20160204256A1公开(公告)日： 2016-07-14
- 发明人: Michael Jackson , Anand MURTHY , Glenn GLASS , Saurabh MORARKA , Chandra MOHAPATRA
- 申请人： Michael JACKSON , Anand MURTHY , Glenn GLASS , Saurabh MORARKA , Chandra MOHAPATRA
- 国际申请： PCT/US2013/061859 WO 20130926
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/10
摘要：
Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.
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